晶圆原子尺度粗糙度形成过程中机械化学协同作用机理

In the ultra large scale integration (ULSI) process，as wafer chemical mechanical planarization (CMP) is developing to higher precision, the atomic scale surface roughness manufacturing becomes one of the key problems to be solved. Firstly, by coupling electrochemical and micro-mechanical systems, the evolution law of activated energy in chemical reactions of copper wafer and the mechanism of material removal under a nanometer particle are investigated, the chemical-mechanical synergism of CMP process will be clarified. Secondly, combining with CMP experiments and theoretical modeling, a correlation mechanism is established between the microscopic material removal and wafer surface roughness based on the chemical-mechanical synergism. This study will reveal the atomic scale surface roughness manufacturing mechanism during wafer planarization process. Thirdly, the control law of chemical reactions and mechanical removal during CMP is investigated, which will provide theoretical and experimental proofs for optimizing the slurry and process parameters.

随着下一代极大规模集成电路（ULSI）制造过程中，晶圆化学机械平坦化（CMP）工艺不断向更高精度发展，原子尺度的表面粗糙度制造成为亟待解决的关键性难题之一。本项目通过耦合电化学和微力学系统，分析晶圆表面化学反应活化能的演变规律和纳米颗粒作用下的材料去除机制，阐明平坦化过程中的机械化学协同作用机理；在此基础上，结合CMP工艺实验和理论建模，在微观材料去除-机械化学协同作用-表面粗糙度之间建立关联机制，揭示晶圆原子尺度表面粗糙度的形成机理；并进一步探索CMP过程中化学反应与机械去除的控制规律，为优化CMP抛光液配方和工艺参数提供理论支持和实验依据。

随着下一代极大规模集成电路（ULSI）制造过程中，晶圆化学机械平坦化（CMP）工艺不断向更高精度发展，纳米级别的平整度和原子尺度的表面粗糙度制造成为亟待解决的关键性难题。本项目基于CMP过程中的机械化学协同作用，分析了CMP过程中微观材料的去除机制，建立起CMP过程中晶圆表面单点材料去除和总体材料去除的数学模型；进一步，结合系统的CMP工艺实验，研究了工艺参数对晶圆全局平整度、表面粗糙度的影响，以及晶圆表面化学反应活化能的演变规律。本项目通过理论模型和实验分析，系统、深入的描述了化学机械平坦化（CMP）过程中晶圆原子尺度表面粗糙度的形成机理，在微观材料去除-机械化学协同作用-晶圆表面粗糙度/全局平整度之间建立起跨尺度关联机制，为下一代极大规模集成电路（ULSI）制造提供了理论支持和实验依据。