Graphene/CdS1-xSex肖特基结薄膜太阳电池吸收层性能调控及器件的光伏性能研究

Schottky junction solar cells with graphene window layer have great application potential in photovoltaic area due to their merit of low-cost and simplicity. In order to exploit their advantages sufficiently, absorbers with high absorption coefficient and matched electrical properties with graphene are insistently needed. CdS1-xSex is an alternative absorber material, which has direct band gap and its band gap can be adjusted between 1.8eV and 2.5eV. In this project, CdS1-xSex films will be fabricated by selenizing CdS films. The effect of Se atoms on the structural, optical and electrical properties will be studied by adjusting Se concentration, and the properties controllable adjusting of the CdS1-xSex films will be realized. After that, schottky junction solar cells will be formed by transferring graphene onto the CdS1-xSex films. The output characterization of the solar cells affected by optical and electrical properties of the absorbers, density of interface states and band structure at the interface will be studied. High-quality photovoltaic devices with optimal structural design, controllable fabrication will be realized, and the conversion efficiency of the solar cells will be increased. Also, these results would be helpful for other similar photovoltaic devices.

以石墨烯作为窗口层的肖特基结太阳能电池由于制备方法简单、成本低等优点，在光伏领域有着广阔的应用前景。但要充分发挥其优势，仍需一种可充分利用太阳光谱，且电学性能与石墨烯匹配的半导体材料作为吸收层。CdSxSe1-x薄膜具有直接带隙，且带宽在1.8eV-2.5eV范围内可调，是该吸收层的候选。本项目拟采用对CdS薄膜进行Se掺杂的方法制备CdS1-xSex薄膜，改变膜中Se含量及膜的结构以研究Se元素对CdS1-xSex薄膜结构及光电性能的影响规律和作用机理，实现对CdS1-xSex薄膜性能的可控调节。在此基础上，通过石墨烯转移工艺构建石墨烯/CdS1-xSex肖特基结太阳电池，研究吸收层光电性能及界面处能带结构、界面态密度等对电池输出特性的影响，实现优质器件结构的设计和可控制备，提高电池的光电转换效率。本项目也将为其他类似石墨烯基肖特基结太阳电池器件的研究提供理论参考。

本项目主要围绕CdS1-xSex/Graphene肖特基结和Sb2(SSe)3基异质结两种过渡金属硫族化合物薄膜太阳电池展开材料及器件性能的研究。主要包括：不同制备技术对CdS1-xSex薄膜的结构及光电性能的影响规律研究、CdS1-xSex/Graphene肖特基结太阳电池器件的结构及工艺路线设计、CdS1-xSex/Graphene肖特基结太阳电池性能的优化；制备工艺对Sb2(SSe)3薄膜结构及光电性能的影响规律、Sb2(SSe)3薄膜太阳电池结构设计及器件性能优化。项目旨在全面、系统的探索高效过渡金属硫族化合物薄膜太阳电池的技术路线，为高效、节能、环保的薄膜太阳电池器件奠定基础。