基于浮空空穴势垒区的新型低噪声IGBT的优化设计与研究

IGBTs(Insulated Gate Bipolar Transistors) are constantly moving toward low losses and low noise. Optimizing the turn-on characteristics of IGBTs is currently one of the hot research areas. This project intends to analyze the turn-on characteristics of IGBTs from the theory of the charge and discharge of the gate capacitance, and then theoretically points out the optimized design direction, which is a fundamental pioneering work. The IGBT studied in this project introduces a heavily doped floating N-type region in the surface region for the first time, which could effectively suppress the reverse charging of the Miller capacitance to the gate electrode, thereby improving the controllability of the gate resistance over the turn-on characteristics. And the trade-off relationships between the turn-on losses and the maximum dV/dt noise could also be significantly improved. The solution proposed in this project will hardly affect other electrical parameters, and its manufacturing process is fully compatible with the existing technology. Therefore, the IGBT studied in this project would have promising application prospects.

IGBT正不断向着低功耗、低噪声的方向发展，优化IGBT的开启特性是目前的研究热点之一。本项目拟从电容充放电理论出发，分析IGBT的开启特性，从理论上指出IGBT开启特性的优化设计方向，属于基础开拓性研究。本项目研究的新型IGBT首次在IGBT表面区域引入重掺杂的浮空N型区，能够有效地抑制密勒电容对栅电极的反向充电，从而提高栅电阻对IGBT开启特性的控制能力，优化IGBT中开启功耗与最大dV/dt噪声之间的折中关系。本项目提出的解决方案几乎不会影响IGBT的其他电学参数，并且其制造工艺与现有技术完全兼容，因而本项目研究的新型IGBT具有广阔的市场应用前景。

绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，IGBT)是最受欢迎的功率半导体器件之一，研发具有自主知识产权的高性能IGBT意义重大。当前，优化IGBT的开启特性是研究者们研究的焦点。本项目从电容充放电理论出发，充分考虑实际应用中的栅电阻、寄生电感、浮空区电位、器件自身电容结构、二极管反向恢复等因素，从理论上分析IGBT的开启过程，得出具体参数之间的相互联系，确定优化参数，为IGBT开启特性的优化设计提供理论指导。基于理论分析，本项目提出了一种新型的IGBT器件结构，该IGBT结构展示了极其优异的开启特性，其导通压降与关断损耗之间的折中关系也比常规的IGBT结构更加优异。并且通过流片验证了一种具有SGT结构的IGBT芯片，该芯片比英飞凌S5系列的开启速度更快。同时，基于本项目的研究成果，多种具有改善反向恢复特性的功率MOSFET结构被提出，部分结构也通过实验流片进行了验证。本项目的理论分析以及实验数据能够为开发高性能的功率半导体器件提供有力的支撑。