基于AlxB1-xNy复合薄膜微波段SAW滤波器的构建及压电互补机理研究

Microwave band high-frequency, high-power SAW filter has been the urgent need of the technical development of the Internet of Things. This application is carried out for how to improve frequency and power of the device, proposing AlxB1-xNy composite films as the piezoelectric layer, conducting research on the building of SAW filter components and the related mechanism. First, performance of "IDT / (AlN/ c-BN) n / Diamond / Si" multilayers SAW is theoretically simulated. Based on diamond film planarization technology, AlxB1-xNy piezoelectric composite thin film was deposited on smooth diamond surface, and PFM module of atomic force microscopy is applied to study the piezoelectric properties and piezoelectric uniformity of microcomposite on thin film, and the complementary mechanism of AlN, c-BN performance is analyzed; With theoretical simulation results “IDT/AlxB1-xNy/Diamond/Si”devices are fabricated and electromechanical conversion mechanism of multilayer structures is studied. The multilayer film system is optimized and dispersion is lowerd, and electromechanical coupling transmission efficiency is improved. Possible options for high-frequency, high-power integrated SAW filter are explored, basic data and related theory for the development of the high-frequency devices are provided..

微波段高频、高功率SAW 滤波器是物联网技术发展的急需，本申请针对如何提高器件频率和功率，提出以AlxB1-xNy 复合薄膜作为压电层，构建SAW 滤波器元件，并对相关复合薄膜的互补机理及机电耦合机制进行分析研究。首先对“IDT/(AlN/c-BN)n/Diamond/Si”多层膜体系SAW 性能理论模拟；其次基于金刚石薄膜平坦化技术，在平滑金刚石表面沉积 AlxB1-xNy 压电复合薄膜，应用原子力显微镜中的PFM 模块研究薄膜微区压电性能及压电均匀性，分析复合薄膜中AlN、c-BN 性能的互补机理；对AlxB1-xNy 薄膜平坦化，以理论模拟为指导集成制作“IDT/AlxB1-xNy/Diamond/Si”元件，研究多层膜结构中机电转化机理，优化多层膜体系，降低频散，以期提高元件机电耦合传输效率。探索高频率、高功率SAW 滤波器集成的方案，为高频器件的研制提供相关理论和工艺依据。

微波段高频SAW 滤波器属于物联网技术快速发展应用领域的关键技术，本课题为提高器件中心频率，提出以AlxB1-xNy 复合薄膜为压电层，构建SAW 滤波器元件，并对相关复合薄膜的互补机理及机电耦合机制进行分析研究。首先对“IDT/(AlN/c-BN)n/Diamond”多层膜体系SAW 器件设计进行仿真模拟；其次基于热化学机械抛光平坦化技术，获得较平坦的金刚石表面，并优化沉积AlN 和c-BN薄膜；基于叠层互补思想沉积制备高平整度的 AlxB1-xNy （(AlN/c-BN)n）压电复合薄膜，应用压电原子力显微技术（PFM）表征分析压电薄膜微区压电性能及压电均匀性，研究复合薄膜中AlN、c-BN 性能的互补机理；以理论模拟为指导集成制作“IDT/AlxB1-xNy/Diamond”元件，分析了多层膜结构中机电转化机理，器件频率达到微波段水平。课题在完成上述工艺基础上探索了高频率SAW滤波器集成方案，为高频器件的研制提供相关理论和工艺依据。