高温紫外光电器件用低维SiC材料的基础研究

High temperature UV photodetectors are the sensor can converts ultraviolet light to electrical signal under high temperature, which often used in the harsh environment of civil and national defense (≥200 ℃). Due to the limited operating temperature of conventional Si-based photodetectors at 125 ℃, it is urgent to develop a class of photoelectric materials and devices that can perform stably in high temperature. SiC is the third generation semiconductor material with the characteristics of wideband gap, high breakdown voltage, high thermal conductivity and high electron mobility. It has significant advantages for use as components in harsh environments such as high temperature, high frequency and high power, which make it an optional material for high temperature UV photodetectors.. This project intends to develop several UV photodetectors that can stably perform in high temperature. Firstly, the first principle will be used to calculate and analyze the influencing factors of SiC's photoelectric performance, so as to determine the best of SiC materials. Then, based on molten salt method and anodic oxidation method, low-dimensional SiC morphology synthesis and performance control will be realized simultaneously. Finally, a low-dimensional SiC-based high temperature UV photodetector will be constructed, and its room temperature service performance, high-temperature service performance and long-term service performance will be studied.

耐高温紫外光电探测器是能在高温服役条件下将紫外光信号转换为电信号的传感器件，常应用于民用和国防等服役条件苛刻的环境中(≥200℃)。传统的Si基光电探测器最高服役温度只能到125℃，因此急需开发一类能够在高温严苛环境下服役的光电探测材料及器件。SiC是第三代宽带隙半导体材料，具有宽带隙、高击穿电压、高热导率和高电子迁移率的特点，在应用于高温、高频和大功率等环境下服役的元器件上具有显著的优势，是制备可胜任高温严苛环境中服役的紫外光电探测器的可选材料之一。. 本项目拟开发出几种能在高温环境中服役的紫外光电探测器。首先使用第一性原理对SiC光电性能影响因素进行计算与解析，确定获得最佳光电性能SiC材料的状态；然后基于熔盐法和阳极氧化法，同步实现低维SiC形貌合成与性能调控；最后基于性能调控的低维SiC构筑出耐高温低维SiC紫外光电探测器，并研究其常温服役性能、高温服役性能和长期服役。

耐高温紫外光电探测器是能在高温服役条件下将紫外光信号转换为电信号的传感器件，常 应用于民用和国防等服役条件苛刻的环境中(≥200°C)。传统的Si基光电探测器最高服役温度 只能到125°C，因此急需开发一类能够在高温严苛环境下服役的光电探测材料及器件。SiC是第 三代宽带隙半导体材料，具有宽带隙、高击穿电压、高热导率和高电子迁移率的特点，在应用 于高温、高频和大功率等环境下服役的元器件上具有显著的优势，是制备可胜任高温严苛环境 中服役的紫外光电探测器的可选材料之一。.本项目着眼于解决紫外光电器件高温服役问题，利用第一性原理从原子层面揭示了元素掺杂对SiC材料的电子结构的影响，明晰掺杂对材料光电性能的影响。同时，利用熔盐法、碳热还原法和阳极氧化等方法实现了低维SiC纳米材料的可控制备。基于上述理论研究指导制备得到的低维SiC被用作活性材料构筑紫外光电探测器，在高达300 °C的恶劣环境下稳定服役半年，成功实现了耐高温光电探测器的开发和应用。基于上述研究内容以第一/通讯作者身份发表SCI论文15篇，EI论文3篇，申请国家发明专利6项。