Organic electronic devices are promising for next generation wearable electronic systems applications due to their flexibility and low cost. Organic thin film transistor (OTFT) is one of the most important device in organic electronics. The cutoff frequency of OTFT is the parameter which reflects the operation speed of the devices. Improve the cutoff frequency of OTFT will effectively increase the operation speed of organic electronics. The mainly methods for improve cutoff frequency is increasing the mobility and scaling down the channel length of OTFTs. However, the overlap length of source/drain and gate electrodes (contact length) has important effect on the cutoff frequency of OTFTs, but the contact length dependent cutoff frequency of OTFTs is lack of study. This project will systemically study the modulation mechanism of contact length on cutoff frequency of OTFTs both from experiments and theory. In addition, the organic semiconductor materials, device structures and the flexible devices deformation on the performance of contact length dependent cutoff frequency of OTFTs will be studied. The successful implementation of this project will provide important guidelines for the realization of high frequency flexible OTFTs and also can promote the development of high frequency OTFTS and organic circuits in our country.
有机电子器件由于其柔性低成本等优势在下一代可穿戴式电子领域具有广泛的应用前景。有机薄膜晶体管是有机电子的核心器件,截止频率是表征有机薄膜晶体管工作速度最重要的参数,提高有机薄膜晶体管的截止频率对提高有机电子的工作速度至关重要。目前主要通过提高器件迁移率及减小沟道尺寸来提高截止频率,然而,栅电极与源漏电极的交叠长度(接触长度)对器件的截止频率具有重要影响。本项目针对缺乏研究的有机晶体管中接触长度对截止频率的影响规律,将从有机晶体管制备分析结合器件模拟等方面系统深入地研究有机薄膜晶体管中接触长度对截止频率的调控机制,建立有机薄膜晶体管中接触长度对截止频率的调制物理模型,研究有机半导体材料种类、器件结构、柔性器件形变等因素对有机薄膜晶体管中截止频率对接触长度依赖关系的影响规律,实现高频率柔性有机薄膜晶体管,开发相应的具有自主知识产权的核心技术,为实现高频率有机薄膜晶体管及其电路奠定基础。
有机电子器件由于其柔性低成本等优势在下一代可穿戴式电子领域具有广泛的应用前景。有机薄膜晶体管是有机电子的核心器件,截止频率是表征有机薄膜晶体管工作速度最重要的参数,提高有机薄膜晶体管的截止频率对提高有机电子的工作速度至关重要。目前主要通过提高器件迁移率及减小沟道尺寸来提高截止频率,然而,栅电极与源漏电极的交叠长度(接触长度)对器件的截止频率具有重要影响。本项目从有机晶体管制备分析结合器件模拟等方面系统深入地研究了有机薄膜晶体管中接触长度对截止频率的调控机制,建立有机薄膜晶体管中接触长度对截止频率的调制物理模型,研究了有机半导体材料迁移率、器件结构、等因素对有机薄膜晶体管中截止频率对接触长度依赖关系的影响规律,获得了有机薄膜晶体管中接触长度对接触电阻及截止频率的影响规律并建立了相应的器件设计规则。本项目形成的有机薄膜晶体管接触长度对截止频率的影响规律有利于指导高频率器件设计;并且此成果可推广到金属氧化物薄膜晶体管甚至二维材料薄膜晶体管等器件中,在驱动显示、传感等领域具有重要的应用前景。发表SCI期刊论文14篇,申请发明专利1项;培养硕士生3名,博士生2名。
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数据更新时间:2023-05-31
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