CMOS毫米波注入锁定锁相环倍频芯片关键技术研究

A high stability of semiconductor miniaturization local oscillator is studied to meet the need of millimeter-wave superheterodyne mixing receiver in radio astronomy. Firstly, we expound the important significance of the project, then compare some different scheme on millimeter-wave semiconductor frequency multiplier and different features of the commonest semiconductor material, at last, we will design a local oscillator with injection locking PLL frequency synthesizer scheme based on silicon CMOS technology. The PLL-based scheme would gain the lower phase noise and the better frequency stability compared with the previous scheme of Schottky diode frequency multiplication. The PLL-based signal source would also largely reduce requirement of environment temperature , decrease volume and power dissipation. Firstly in this project, we would research device modeling and parameter extraction of millimeter-wave band in silicon-based 65nm CMOS process, and secondly the EM parameter effect to circuit simulation and layout design would be discussed, above all, the novel key technology of injection locking PLL architecture on millimeter wave band would be studied.

针对射电天文毫米波超外差混频接收机本振信号源设计需求，项目拟研究小型化、高频率稳定度半导体本振信号源。首先阐述了项目研究的重要意义，然后比较了几种常用半导体毫米波倍频方案，对比目前几种主要半导体材料的特点，最终选定硅基CMOS工艺，结合采用毫米波注入锁定锁相环倍频方案设计实现。该方案相比先前肖特基二极管倍频方案，可以获得更低输出频率相位噪声，同时提高输出信号功率；相比于超导分频方案，可以降低环境温度要求、减小体积与功耗。项目将在研究硅基65nmCMOS工艺、完成毫米波电磁建模与评估电磁参数对CMOS仿真与版图设计影响基础上，重点设计试制毫米波注入锁定锁相环倍频信号源。

课题主要针对射电天文毫米波超外差混频接收机本振信号源设计需求，采用硅基CMOS半导体工艺设计研究100GHz附近频率合成关键技术，包括注入锁定基波压控振荡器、注入锁定二次谐波振荡器以及注入锁定预分频器。研究方案相比肖特基二极管倍频方案而言，具有更低的相位噪声和更高的输出功率；对比超导分频技术而言具备更小的体积与功耗且对温度条件要求也更为宽松。.基于硅基65nm CMOS射频集成电路工艺，课题首先研究了100GHz附近射频无源器件建模技术，针对不同工艺、不同结构与参数，如金属层数、金属层厚度和介质的介电常数等等，探索研究了不同微波无源器件建模方法并结合课题实际需求设计制作了多种片内螺旋电感并完成流片验证。其次，在前面器件建模基础上，通过电路设计结构创新，综合考虑输出功率与最高工作频率两项指标，分别对比设计验证了基波与谐波压控振荡器电路性能，对比设计验证了有注入锁定与无注入锁定振荡器电路性能，对比设计验证了有注入锁定与无注入锁定前置预分频器电路性能。该项课题探索的顺利推进为后期100GHz频段半导体器件与电路的设计应用奠定了较好的可行性研究基础。