日盲紫外GaN基探测器集成技术基础研究

Nowadays, GaN material is attracking people's much attention for its perfect physical,chemical perperties and especially due to its adjustable forbidden bandwidth from 3.4 eV to 6.2 eV. As the fabrication technology develops,variety of GaN-based devices, such as laser devices, LEDs, transisters and detectors have been developed and extensively applied in many fields. However, as the GaN-based detector develops to large scale integrated arrays, it's diffucult for us to obtain large scale detector array with high performance(such as high response rate, high resolution, and so on). This proposal propose a novel method to solve this current problem that exists in the GaN-based large scale focal-plane area. In this novel method, a new technology would be developed to integrate the GaN-based UV detector and the GaN transistor into the same GaN substrate. The implementation of this proposal will not only develop new integration technologies for GaN-based devices, but also accelerate the GaN-based array detectors' practicality and industrialization process.

GaN基材料以其稳定的物理和化学性能,以及在3.4 eV到6.2 eV之间的连续可调的禁带宽度,使得他在诞生之初就引起广泛地关注,并用于制备诸如激光器、LED、晶体管以及探测器等各种器件。随着紫外探测技术的进步及广泛应用，集成化的紫外探测器阵列成为当前发展趋势。然而，采用传统的集成技术制备高响应率以及规模化的紫外传感器阵列存在巨大的挑战。本项目旨在通过研究GaN基探测器集成技术，将GaN紫外探测器与带有增益的GaN晶体管集成在同一GaN基材料上，以解决目前在焦平面阵列探测器发展中的瓶颈问题。本项目的实施将不仅发展GaN基探测器新的集成技术，而且将促进紫外探测器阵列（特别是焦平面阵列器件）的实用化及产业化。

本项目在研制过程仅仅围绕项目申请书的时间节点以及研究内容展开，从理论和实验制备两部分入手，利用TCAD仿真软件计算了不同的结构参数以及材料参数对器件性能的影响，以及紫外探测器与有源器件之间的集成原理，从理论上得到了制备器件的模型。根据理论计算的结果，设计了一套制备器件的光刻掩模版，具有11层套刻层，涉及到的制备工艺具有30步之多。在器件制备过程中，对其中的关键工艺ICP-CVD生长介质膜进行了详细的研究，给出了一个满足生长栅介质层、电容介质层以及生长器件钝化膜的条件。制备得到的性能较高的电容器件，零偏电压附近，器件的暗电流约为10fA，在一定的积分时间内，具有较低噪声电子，满足集成探测器的需求。制备得到紫外探测器的峰值响应率为0.112A/W，对应波长为266nm，响应波长范围为250nm-280nm，恰好为日盲紫外波段。在日盲紫外LED的光照下，测试了集成器件的电路中电容的电压，最大获得了89.3mV的光生电压，对应探测器的光敏元半径为250um。电路中的回路电流最小为13nA，探测器的光敏元半径为25um。并且为了提高整个集成器件的填充因子，开展了有关衬底微透镜技术的研究。