基于III族氮化物半导体深紫外发光材料的微盘激光器研究

III-Nitride semiconductor materials based AlGaN-based ultraviolet laser diodes (UV LD) have great potential in a wide range of applications, such as sterilization and disinfection, polymer curing, biochemical detection, non-line-of-sight communication. Microdisk lasers have various advantages of simple geometry, small volume, low threshold, low power dissipation and easy integration. In this project, we plan to focus on the research of the material epitaxy and device fabrication of III-Nitride deep ultraviolet (DUV) microdisk LD as well as its physical problems. We will start from the epitaxy of the elemental Al-rich Nitride materials, based on which efficient DUV quantum structures will be designed and grown. Much attention and efforts will be paid to the fabrication of the round microdisk with vertical and smooth sidewall, as well as to the fabrication of the free-standing structure. On the basis of the in-depth understanding of the material properties and physical mechanisms, DUV microdisk LD will be developed and be expected to achieve the lasing wavelength below 300nm.

基于氮化物半导体材料的紫外激光器在杀菌消毒、聚合物固化、生化探测、非视距通讯等许多领域具有广阔的应用前景，微盘激光器具有几何图形简单、体积小、阈值低、功耗低、易于集成等优点。本项目以三族氮化物半导体深紫外微盘激光二极管的材料外延和器件研制以及相关物理问题的研究为主要内容，从深紫外微盘激光二极管所需的基础高Al组分氮化物材料外延入手，设计并生长高效深紫外量子结构，重点突破高圆度、侧壁垂直光滑的深紫外微盘结构及支撑结构的制备工艺；通过研究深紫外微盘激光器的材料和物理性质，深入理解相关的物理机制，指导材料和工艺的提升进步，最终研制出氮化物深紫外微盘激光器，实现激射发光波长<300nm。

基于氮化物半导体材料的紫外激光器在杀菌消毒、聚合物固化、生化探测、非视距通讯等许多领域具有广阔的应用前景，微盘激光器具有几何图形简单、体积小、阈值低、功耗低、易于集成等优点。本项目以三族氮化物半导体深紫外微盘激光二极管的材料外延和器件研制以及相关物理问题的研究为主要内容，系统开展了深紫外微盘激光二极管的核心材料、量子结构、微盘工艺等的研究，展了高Al 组分氮化物材料的MOCVD 外延研究，突破掌握了高质量AlN模板材料的MOCVD外延工艺，获得高质量的AlN模板材料，AFM表面粗糙度小于0.2 nm，位错密度降低到10^8 cm^-2量级。在获得高质量材料的基础上，设计并外延制备了基于AlGaN材料的深紫外波段高效量子阱结构，实现内量子效率> 50%。圆满完成了该一年执行期内的既定任务，在此基础上，超额开展了AlGaN基深紫外微盘结构关键制备工艺的研究，获得了高质量的微盘结构。.项目执行期间在高水平期刊（Photonics Research、Optics Express）发表SCI文章两篇，培养研究生4人。