基于直接外延的硅基III-V族半导体微腔激光器研究

Due to the physical and technological challenges which the current microelectronic technology encounters, people pay more attention to Silicon photonic integrated circuits (PICs) to satisfy demand of the information age. However, the most important issue of Si PICs remains unresolved, which is the light source. Lasers based on IV materials which are compatible with Si CMOS process are far from practical use. Because of the reliability problems, the booming InAs quantum dot lasers are not suitable for large-scale application. The yeild problem of high-performance hybrid lasers prevent their large-scale integration (LSI). To solve these problems, this project aims to fabricate microcavity laser on Si based on high quality III-V semiconductors on Si and microcavity simulation alalysis, through the research of the Whispering-Gallery Modes, the optical field distribution, and quality factor of InGaAs/GaAs optical microcavities. It also studies the microcavity coupling issues, output power, spectra, reliability and so on. The direct heteroepitaxy method could prepare for the LSI and the small size is the key factor to reduce the loss caused by defects during the heteroepitaxy of III-V on Si. The project can provide an theory and solution support of microlaser for Si light source and necessary technology accumulation for Si PICs.

微电子技术遇到物理和工艺双重挑战，人们将目光转移到能够满足信息时代需求的硅基光子集成上来。然而，硅基光子集成最重要的一个问题没有解决—光源。与硅工艺兼容的IV族材料体系作为有源区的硅基激光器还远远没有达到实用化的程度；近年来发展较为迅速的硅基InAs量子点激光器由于可靠性的问题尚未大规模使用；性能较为优异的混合激光器由于成品率较低难以大规模集成。针对这些问题，本项目以直接异质外延获得的高质量硅基III-V族半导体材料为基础，通过研究InGaAs/GaAs为有源区的光学微腔的回音壁模式、光场分布、品质因子等性质，以数值模拟为参考，制作硅基微腔激光器。并且研究微腔激光器中光的耦合输出以及功率、光谱、可靠性等问题。本项目采用的直接外延方案可以为大规模集成做铺垫；微型激光器可以降低硅基异质外延产生的损耗对激光器的影响。本研究为硅基光源提供一种微型激光器的理论和方案支持，为硅基光子集成提供技术积累。

微电子技术遇到物理和工艺双重挑战，人们将目光转移到能够满足信息时代需求的硅基光子集成上来。然而，硅基光子集成最重要的一个问题没有解决—光源。与硅工艺兼容的IV族材料体系作为有源区的硅基激光器还远远没有达到实用化的程度；近年来发展较为迅速的硅基InAs量子点激光器由于可靠性的问题尚未大规模使用；性能较为优异的混合激光器由于成品率较低难以大规模集成。. 针对这些问题，本项目以直接异质外延获得的高质量硅基III-V族半导体材料为基础，通过研究InGaAs/GaAsP为有源区的光学微腔的回音壁模式、光场分布、品质因子等性质，以数值模拟为参考，制作硅基微腔激光器。本项目制作硅基微腔激光器输出功率为30微瓦，中心波长1100nm，由于半宽超过10nm，判断器件为增强的自发辐射性质。本项目采用的直接外延方案可以为大规模集成做铺垫；微型激光器可以降低硅基异质外延产生的损耗对激光器的影响。. 本研究为硅基光源提供一种微型激光器的理论和方案支持，为硅基光子集成提供技术积累。