基于肖特基接触硅基超晶格结构高TCR实现方法研究

The development of the materials with higher TCR (Temperature Coefficient of Resistance) is the effective way to improve the bolometer performance. The project presents the method to achieve amplified TCR in silicon superlattices with Schottky contact. The superlattice and schottky thermal sensitivity mechanism should be studied further. The relationship between TCR and physical model (impurity level, hole level, carrier concentration) would be present under the p-type impurities semiconductor ionization mechanism. The general rules of silicon based superlattice with high TCR would be solved with the physical analysis through semiconductor calculation software. Energy levels, carrier concentration, quasi Fermi level and other physical parameters of schottky barrier would be solved in both equilibrium state and electric injection condition. The experiments would be conduct. The mechanism of amplified TCR with Schottky contact would be achieved with the experimental verification. The project aims to find the way to improve the material performance, which would enrich the theoretical research systems of high TCR bolometer materials.

提高热敏材料电阻温度系数（TCR）是提高非制冷红外成像水平的重要途径。为了进一步提高材料TCR,项目提出了一种具有TCR增强效应的肖特基接触硅基超晶格结构。实现该结构需要进一步精确描述超晶格、肖特基势垒热敏特性机理。项目拟根据p型杂质半导体平衡态电离机理，推导TCR与半导体物理量（杂质能级、空穴能级、载流子浓度）之间的关系。以此为依据，通过半导体分析软件，计算超晶格对应的物理模型，探究硅基超晶格结构热敏特性共性机理问题。计算平衡态与电注入条件下肖特基势垒超晶格结构的能级关系、载流子浓度、准费米能级等物理参量，形成具有TCR增强效应的肖特基势垒超晶格结构设计方法，并设计实验予以验证分析。本研究期望形成高TCR材料设计方法，充实高性能非制冷红外热敏材料理论研究体系。

本项目针对非制冷红外条件下的探测需求，力求解决高电阻温度系数热敏材料问题，其难点在于建立硅基超晶格薄膜材料电阻温度系数模型。项目重点完成了平衡状态下超晶格结构热敏特性、金属半导体接触及热敏特性、偏压条件下超晶格材料高TCR实现方法等研究内容。通过研究，项目定量描述了p型杂质半导体TCR与物理量之间的关系，探索了硅基超晶格结构热敏特性共性问题，设计了具有TCR增强效应的肖特基势垒，形成了高TCR硅基热敏材料获取方法，实现了电阻温度系数5%/K的验证样片。高TCR敏感结构模型等成果有望在新一代非制冷红外焦平面阵列方面应用，预计可进一步提升非制冷红外光电器件成像水平。项目发表SCI期刊论文6篇，参与MEMS领域国际会议2次，申请/授权国家发明专利3项，培养硕士研究生3名，实现了项目的预期计划，达到了项目所要求的研究成果。