非接触无损电子束显微内窥半导体材料和器件的新检测法

In the procedure of developing and producing semiconductors and integrated circuits (IC), it is necessary to produce an insulation layer on their surface or between two layers of IC with the multi-layers. For our conventional Scanning Electron Microscope (SEM), it is impossible to apply it to detect defects of semiconductors and microstructure of IC with an insulation layer on the surface. So it is essential to study a novel detection method.On the basis of electromagnetics, semiconductor physics and device technology, electrooptics, electron microscopy, electrocircuit and computer theory and technology, and after having done numerous analyzing, computing and experimenting, we developed successfully a novel method of internal nondestructive microscopic visualization of semiconductors and IC with an insulation layer on the surface, namely "Detecting method crossing surface". By the "Detecting method crossing surface", we Successfully developed a novel detector, namely "Detector crossing surface". So a conventional SEM that is attached "Detector crossing surface" can achieve the functioning of internal nondestructive microscopic visualization of semiconductors and IC with an insulation layer on the surface.It is important that "Detecting method crossing surface" and "Detector crossing surface" were successfully developed. It makes the conventional SEM the breakthrough of the function. With them we can make the special instrument of detecting semiconductors and IC. With the special instrument, dramatically improving the qualified rate, finished product rate and reliability will come true. So it has important science value and it is significant to economy and society.

按电磁场、半导体、电子光学及电子显微学理论计算、经实验研究，提出创新性强的高分辨率非接触无损电子束显影内窥半导体材料和器件的新检测法，制成检测仪，安装到扫描电镜SEM中，其功能突破SEM常规应用范围。能看到绝缘层下半导体材料和器件界面微结构图像。还可测试半导体物理参数。对研究半导体物理、材料和器件很有用，其科学、经济意义大。