附加行波磁场熔体法生长优质GaSb单晶及相关基础研究

Gallium antimonide is widely used in middle and long wave infrared quantum well lasers, infrared detectors and thermal photovoltaic cells as substrate. Gallium antimonide single crystal is grown mainly from melt, such as LEC method. Due to non-uniform thermal field and the rotating centrifugal force convection will be produced in the melt, which will lower the quality of crystal by affecting the stability of the solid liquid interface and the distribution of dopants. This project aims at single crystal grown from melt with additional magnetic field and set up the mathematical model of melt flow with magnetic field. By numerical calculation, magnetic field parameters and the melt movement are analyzed. The effect of magnetic field on the stability of melt, solid liquid interface and dopants distribution is also studied. The numerical results are used in crystal growth experiments, and high quality gallium antimonide single crystal is produced.

锑化镓作为衬底材料广泛用于研制中长波红外量子阱激光器、红外探测器及热光伏电池等。常规液封直拉法熔体生长GaSb单晶过程中存在重力场引起的熔体湍流、热场不对称、旋转搅拌强制对流等。这些不利因素破坏固液界面的稳定性、增加温度和生长速率起伏、降低晶体中杂质分布均匀性。本项目研究加热器附加磁场熔体法GaSb单晶生长技术，通过建立附加磁场条件下坩埚内熔体流动的数学模型，利用数值计算模拟确定磁场参数、加热器结构和熔体运动规律。研究磁场对熔体流动稳定性，固液界面形态以及溶质分布的影响，在此基础上开展单晶生长实验并结合模拟分析结果优化单晶生长工艺，获得高质量的锑化镓单晶。

锑化镓单晶主要应用于中长波红外量子阱激光器、红外探测器、热光伏器件。本项目重点研究了加热器附加磁场熔体法GaSb单晶生长技术，通过建立附加磁场条件下坩埚内熔体流动的数学模型，利用数值计算模拟确定磁场参数、加热器结构和熔体运动规律，研究了磁场对熔体流动稳定性，固液界面形态以及溶质分布的影响，在此基础上对单晶开展了单晶生长实验并结合模拟分析结果并对单晶生长工艺进行优化，获得高质量的GaSb晶体，促进了外延材料质量和器件性能的提高。对TMF-LEC法生长的GaSb单晶进行了电学和光学测试，研究其电学参数，位错分布，红外均匀性。