It is significant that quick, accurate,and high sensitive detection of the traces nitric arene such as TNT,DNT and AT,to name just a few, can be applied in hidden explosive devices test, in preventing the terrorist crime and in monitoring the environment quality. At present, the fluorescence detection of nitric arene is more focus on susceptible visible light area. ..In this project, a new type near-infrared sensor is comprised of one-dimension silicon nanometer line, which owns an array of benefits such as huge specific surface area and high sensitivity, and mantal ion phthalocyanine modified by ammonia,carboxyl,or sulfonic group, which is insusceptible for its fluorescent emits in near-infrared light area. This kind of sensor can detective traces of nitro arene selectively, sensitively, and can be influenced by fluorescent light background hardly, through the way that is to combine the silicon nanometer line, whose surface, structure, and dimension is optimized, with the phthalocyanine, wich is proper designed for special molecule structure responding to nitro arene respectively, by chemical covalent bond...In the progress, the relationships will be discovered between sensor's sensitivity and silicon nanometer line's surface, structure, and dimension, and the influence will be explored between sensor's selectivety and phthalocyanine's molecule structure, and the photo-physical and photo-chemical photoresponse process will be recognized between sensor and detective object. After this project, it is possible to detect hidden explosive containing nitro arene super sensitively.
快速准确高灵敏检测痕量硝基芳烃(如TNT、DNT、AT)对隐藏爆炸物的探测、预防恐怖犯罪和环境质量监控具有重要意义。目前,基于硝基芳烃的荧光检测多集中在可见区,易受干扰。本项目拟制备具有氨基、羧基或者磺酸基取代的Ni、Cu、Zn金属酞菁类分子修饰一维硅纳米结构的新型近红外荧光传感器,利用一维纳米结构比表面积大、灵敏度高以及酞菁类分子近红外发光对背景荧光传感器干扰性小等优点,通过对硅纳米线的形貌、尺寸和结构的优化,设计对硝基芳烃选择性识别的酞菁分子并通过共价键修饰到一维纳米结构的表面,实现对硝基芳烃高灵敏、高选择、强抗背景荧光干扰检测。通过研究揭示硅纳米线的形貌、尺寸、结构、表面态等特征与传感器灵敏度的关系,探索酞菁分子的分子结构对传感器的选择性和抗背景荧光干扰性的影响,认识传感器对检测目标光响应的光物理和光化学过程。本项目的研究结果将为硝基芳烃类隐藏炸药的超灵敏检测提供一种新的方法。
本项目以硅纳米线的可控制备为基础,利用硅纳米线表面硅氢键与有机官能团醛基的反应,发展了硅纳米线表面修饰新方法。该方法使硅纳米线的修饰条件更加温和,更有利于传感器的制备及性能提高。以此为基础,构建了一系列基于硅纳米线的荧光化学传感器,实现了对pH、硫离子、碱性磷酸酶、配位铜离子的高灵敏、高选择性检测。此外,我们还将硅纳米线扩展到氧化锌纳米线,发展了基于氧化锌纳米线的SERS传感器,实现了对N719、4-乙酰氨基酚的高灵敏检测。主要工作包括:硅纳米线表面修饰的新方法及其在pH荧光传感器中的应用,基于硅纳米线的配位铜离子荧光传感器,基于硅纳米线的硫离子荧光传感器,基于氧化锌纳米线阵列的SERS传感器和新型近红外染料的设计合成及应用研究等内容。基于这些工作,发表研究论文8篇。
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数据更新时间:2023-05-31
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