低维螺旋手性磁体的霍尔效应

Topological Hall effect is one type of unconventional Hall effect arising from the Berry phase of conductive electrons passing through non-planar spin texture, occurring in a variety of magnetic materials with broken inversion symmetry, such as Skyrmion lattice. Magnetic solitons are particle-like spin textures protected by topology, while the related studies of topological Hall effect remain elusive. We propose to fabricate and measure the Hall devices based on helimagnetic Cr1/3NbS2 flakes with different layer numbers, in order to experimentally observe and verify the topological Hall effect in magnetic soliton spin texture and to investigate the relationship between this effect and the soliton number, creating more exciting opportunities in the applications of low-consuming quantum topological devices.

拓扑霍尔效应是因巡游电子经过非共面自旋构形产生贝里相位，从而导致的一种非正常霍尔效应，已在多种具有中心反演对称性破缺的磁性材料中得到了实验验证，例如斯格明子晶格等。磁孤子是另一种具备准粒子性且受拓扑保护的自旋结构，然而关于其拓扑霍尔效应的研究仍是空白。本申请通过制备和测量基于不同层数的Cr1/3NbS2薄片的霍尔器件，从实验上观测和验证磁孤子自旋构形能够导致新型拓扑霍尔效应，并探索该效应随磁孤子数目的变化规律，为低能耗的拓扑量子器件的应用提供更多潜在机会。

拓扑霍尔效应是因巡游电子经过非共面自旋构形产生贝里相位，从而导致的一种非正常霍尔效应，已在多种具有中心反演对称性破缺的磁性材料中得到了实验验证，例如斯格明子晶格等。磁孤子是另一种具备准粒子性且受拓扑保护的自旋结构，然而关于其拓扑霍尔效应的研究仍是空白。本申请通过制备和测量基于不同层数的Cr1/3NbS2薄片的霍尔器件，从实验上观测和验证磁孤子自旋构形能够导致新型拓扑霍尔效应，并探索该效应随磁孤子数目的变化规律，为低能耗的拓扑量子器件的应用提供更多潜在机会。