氮化镓基微波毫米波功率器件新型建模方法研究

Nowadays, how to develop and improve the microwave and millimeter wave communication system is crucial for defense-related and civil communication science & technology. As one of wide band-gap semiconductors, Gallium Nitride (GaN) has a high power density, heat capacity and thermal conductivity. As a result, GaN based power devices can be widely adopted in today's advanced communication applications such as microwavd and millimeter wave electronic devices and commercial communication base stations. Therefore, there is a urgent demand in developing the accurate modeling technologies for these GaN based power devices..With the help of research on current international advanced power devices modeling techniques, this project is aimed to independently develop a novel multi-dimensional look-up table-based modeling method with error feedback function, which can accomplish the job of accurate modeling GaN based microwavd and millimeter wave power devices. This proposed modeling method is based on a creative hybrid de-embedding procedure including accurate electromagnetic (EM) simulation and gloable pre-optimization. The measurement data fitting step of this modeling method adopts transient voltage-current analysis and frequency domain polynomials curve fitting method to build the look-up table. Meanwhile, the accuracy of this novel table based model is reinforced and guaranteed by multi-dimensional error feedback loops. This novel nonlinear modeling method is mainly focused on the GaN microwave and millimeter power devices' transient input/output signal simulation of their nonlinear application characteristics, which can effectively improve the accuracy of the GaN-based microwave and millimeter wave high-power integrated circuit design. The completion of this project can fill the blank of domestic modeling techniques for GaN-based microwave and millimeter wave power devices, so as to catch up and even exceed the advanced international modelling technologies. Therefore, this proposed project has not only a great practical significance for the domestic microwave and millimeter wave monolithic integrated circuit (MMIC) design, but also a crucial importance to achieve the rapid development of the next generation of advanced microwave and millimeter-wave communication.

当前，高性能小型化微波毫米波通信系统是国防科技和民用通信发展必须首先解决的技术关键。基于新型宽禁带半导体材料氮化镓（GaN）工艺的微波毫米波功率器件具有输出功率密度大、耐高温、抗辐射等特点，可以广泛应用于未来各种尖端国防电子装备和民用通信基站等领域，具有重要的战略意义和研究价值。.本项目立足于对当前国际先进半导体建模技术的研究和发展，自主开发一种新型混合多维度查表模型来完成对GaN基微波毫米波功率器件的精确建模。该方法采用创新的电磁仿真结合全局预优化去嵌，并创建新颖的多维度误差反馈查找表技术修正拟合数据从而确保模型仿真性能的准确无误。该模型着重于功率器件各种大信号非线性应用特性模拟，可有效地提高GaN基微波毫米波集成电路系统的设计精度。本项目的完成可填补国内氮化镓基微波毫米波功率器件建模的空白，达到并超越国际先进水平，对我国未来氮化镓基微波毫米波通信的快速发展和广泛应用起到有力的推动作用。

当前，高性能小型化微波毫米波通信系统是国防科技和民用通信发展必须首先解决的技术关键。基于新型宽禁带半导体材料氮化镓（GaN）工艺的微波毫米波功率器件具有输出功率密度大、耐高温、抗辐射等特点，可以广泛应用于未来各种尖端国防电子装备和民用通信基站等领域，具有重要的战略意义和研究价值。.本项目立足于对当前国际先进半导体建模技术的研究和发展，自主开发一种新型混合多维度查表模型来完成对GaN基微波毫米波功率器件的精确建模。该方法采用创新的电磁仿真结合全局预优化去嵌，并创建新颖的多维度误差反馈查找表技术修正拟合数据从而确保模型仿真性能的准确无误。该模型着重于功率器件各种大信号非线性应用特性模拟，可有效地提高GaN基微波毫米波集成电路系统的设计精度。本项目的完成可填补国内氮化镓基微波毫米波功率器件建模的空白，达到并超越国际先进水平，对我国未来氮化镓基微波毫米波通信的快速发展和广泛应用起到有力的推动作用。