高增益AlGaN日盲紫外异质结光电晶体管基础问题研究

AlGaN日盲波段紫外探测器在军事和民用方面具有重要的应用价值，但无增益的AlGaN日盲紫外光电二极管无法满足在微弱光信号下应用的需求，因此研制具有增益的AlGaN日盲紫外探测器具有重要意义。目前，国内外在这方面的研究主要集中在AlGaN雪崩二极管上，对同样具有自增益的AlGaN日盲紫外异质结光电晶体管的深入研究却还没有。本项目拟通过理论计算、模拟仿真等方法对AlGaN日盲紫外异质结光晶体管的器件物理、结构设计进行研究，获得AlGaN异质结光电晶体管的器件结构参数、AlGaN材料参数与器件性能之间的内在联系和规律；优化器件结构、研制原型器件；结合器件的光增益、响应率、响应速度等性能，研究 AlGaN异质结中的复合中心、材料中的缺陷、关键工艺等因素对器件性能的影响机理；为获得具有增益的AlGaN日盲紫外异质结光晶体管提供理论和实验基础。

AlGaN solar-blind ultraviolet photodetectors have huge potential and practical applications in military and civil aspects. However, the AlGaN solar-blind photodiodes which have no gains can not work under weaker signal conditions. So the study on the AlGaN solar-blind photodetector with high gain has great significance. Only few study on the high gain AlGaN solar-blind ultraviolet heterojunction phototransistors (HPTs) has been reported. In this project, the device physics and designation of high gain AlGaN solar-blind UV HPTs have been investigated by simulations to get the inherent connections between the performance and the structure and material parameters of AlGaN solar-blind UV HPTs. And the fabrication processes of the AlGaN HPT have been studied, including the ICP etching, the contact on n-AlGaN. The original AlGaN solar-blind UV HPTs have be fabricated and tested. From the analysis, it is indicated that the structure of the AlGaN DHPT should be optimized again.