纳米尺度CMOS可重构电感、毫米波多频段与超宽带集成电路的关键技术研究

The primary objectives of this project are to solve the bottleneck problems of low product yield of the fabricated CMOS millimeter wave integrated circuits due to the performance degeneration or even failure, and develop the key design techniques for reconfigurable inductors. The electromagnetic character, rule and loss mechanism of reconfigurable inductors will be investigated. The principles of the structure of reconfigurable inductors and the character of CMOS switches that affect the performance of reconfigurable inductors will be identified. Accurate model of reconfigurable inductors will be presented. Several reconfigurable inductors with high quality factor and wide inductance tuning range will be designed and fabricated.The contributions of this research are that it provides theoretical guidance and technological innovations for improving product yield of millimeter wave CMOS chips.It will contribute to China's independent intellectual property right in the area of millimeter wave CMOS integrated circuits.

本项目旨在突破CMOS毫米波集成电路在流片后性能变差甚至失效的低成品率瓶颈问题，并提出设计可重构电感的关键技术。研究可重构电感的电磁特性、规律与损耗机理，明晰可重构电感结构与CMOS开关的特性对可重构电感性能的影响规律，构建准确的可重构电感的理论模型，研制高品质因数、宽电感值可调范围的可重构电感。通过本项目的研究，为提高毫米波CMOS芯片的成品率，提供理论指导与技术储备，并有助于建立起我国在毫米波CMOS 集成电路领域的自主知识产权。

纳米尺度毫米波CMOS电路由于存在各种损耗与寄生效应而导致流片后性能变差甚至失效。为了提高毫米波CMOS芯片的成品率，开发电感值可调的片上CMOS电感是行之有效的解决方法。本研究利用基于多层共面波导的结构设计可重构片上单端、差分电感。采用聚焦离子束或CMOS开关的方法实现电感值可调。采用慢波结构提高品质因数。所设计的几款毫米波CMOS可重构片上集成单端、差分电感具有电感值可调范围宽、品质因数高等特点。本项目的研究为提高毫米波CMOS芯片的成品率，为采用可重构片上电感设计超宽带与多频段毫米波集成电路提供理论指导与技术支撑。在本项目的资助下，发表了2篇SCI、2篇EI国际期刊论文，并申请了三项发明专利，培养了4位学生参与器件仿真与版图设计。