ROMP技术合成窄PDI嵌段聚合物自组装纳米阵列多进制存储单元研究

The memory technology nowadays cannot meet the demand of information storage seriously, even the copy of a 3D IMAX movie is weighted to a few hundred kilograms nowadays. To improve the information storage density, two basic ways are put forward, one is to downscale the size of memory unit, the other is to realize multilevel memory technology. This project is trying to realize super-high data-storage density by combining the two ways together. Through ring opening metathesis polymerization (ROMP), the amphiphilic polymer with "A-D-A" structure was synthesized with the PDI close to 1, then this block polymer can be self-assembled into nano-sphere with four distinctive layers in aqueous solvents, and each nano-sphere is containing two electron-withdrawing layers and an electron-donor layer, which can be served as a ternary memory cell. Subsequently, constructing the hydrophilic nano matrix on the substrate can make the nano-spheres arrange orderly on the electrode substrate. This method is effective to downscale the memory unit to nanoscale, which makes a breakthrough in the field of micron level technology and opens a new way for material design and device fabrication with super-high data-storage density.

现有存储技术严重滞后于信息存储需求，一部3D IMAX数字电影拷贝就要几百公斤就是明证。提高信息存储密度有两个根本途径，一是缩小存储单元尺寸，二是突破二进制实现多进制，本项目创新性地提出把两者联合起来实现超高密度信息存储的新思路，首先利用开环易位聚合(ROMP)创建PDI近似1的“A-D-A-亲水”的两亲性多嵌段聚合物，可自组装实现由内而外分别是吸电子层、给电子层、吸电子层和亲水层的纳米小球，即每个纳米小球含有两个吸电子层和一个给电子层相当于一个三进制存储的器件单元；其次在电极基底上构建亲水性纳米矩阵，诱导纳米小球在电极基底形成矩阵排列，实现纳米级存储单元的器件化，突破了半导体加工技术还停留在微米水平的限制，为超高密度信息存储开辟了材料设计和器件制备的新途径。

随着5G时代的到来，传统的基于“0”和“1”的二进制信息存储技术已经远远不能满足“爆炸式”的信息存储需求。目前广泛研究的有机三进制存储器件还普遍存在一些问题，如器件稳定性差、器件重复率低、储存机理不明确等，这些都极大限制了有机三进制电存储技术在未来的实际应用。而解决这些问题的根本途径就是要推动有机材料在薄膜中实现有序的堆积方式，因为功能材料的堆积可以很大程度上影响电荷载体在薄膜中的有效传输。众所周知，有机材料中的 分子堆积主要取决于两种非共价力:范德华力(π-π 相互作用)和氢键的形成。另外，现如今研究的多进制存储单元大都是微米级别的，为了进一步提高信息存储密度，本项目拟在多进制存储的基础上，设计合成两亲性聚合物，通过溶液自组装和基底处理实现纳米阵列胶束的存储单元，实现真正意义上的超高密度信息存储。