The source,which is the headstream of the lithography machine,determines the performance of the lithography machine and the half pitch of IC. And the 6.x nm BEUV source, which is the development of the EUV source, is one of the key techonologies to achieve 10nm node or even below. The laser assisted discharge plasma (LDP) source , which is one of the most important technologies to achieve BEUV source, uses laser to gasify the Gd or Tb target. And then the fast and high pulse current loads in the Gd or Tb pre-plasma and then generates 6.x nm emission.Based on the work of the Xe DPP EUV source, this research subject will use the Gd or Tb LDP technology to achieve 6.x nm emission.Using the Cowan code and the MHD model to research the atomic parmeters of Gd and Tb and the physical mechanism that the generating of 6.x nm which is caused by the Z-pinch high temperature and high density plasma.Moreover, the infulence on plasma, Gd and Tb spectra and the temporal of 6.x nm(0.6% bandwidth) emission of all conditions will be researched experimentally. By combing the experimental results with the theory, a better conversion efficiency will be got. Moreover, the theory model will be updated as well. All of these work will be helpful by the physical and technical supproting for the BEUV source and other key devices in all researches which need it.
光源作为光刻机的源头,决定了光刻机的性能和集成电路的最小特征尺寸。6.x nm 超极紫外(BEUV)光源是实现10nm及以下特征尺寸的下一代主要光刻光源,其是13.5nm极紫外(EUV)光源的发展和延续。激光辅助放电等离子体技术(LDP)是实现BEUV光源的主要技术方案之一,其采用激光气化Gd或Tb介质,随后利用快脉冲大电流放电产生6.x nm输出。在前期Xe DPP EUV光源研究基础上,本项目采用Gd和Tb介质LDP技术,实现6.x nm输出。利用Cowan程序和磁流体力学模型,重点研究Gd和Tb各项原子参数和Z箍缩高温高密度等离子体产生6.x nm辐射的物理机制。同时,实验上研究各种参数对等离子体状态、Gd及Tb光谱和6.x nm(0.6%带宽)辐射时间特性的影响,与理论模型相结合,优化转换效率,修正理论模型,为国内开展各项研究所需的BEUV光源和其他关键器件研制提供物理及技术支持。
光源作为光刻机的源头,决定了光刻机的性能和集成电路的最小特征尺寸。6.x nm 超极紫外(BEUV)光源是实现10nm及以下特征尺寸的下一代主要光刻光源,其是13.5nm极紫外(EUV)光源的发展和延续。本项目采用Gd介质激光辅助放电(LDP)技术,实现了6.7 nm辐射输出。理论上计算了Gd原子参数,模拟了不同条件下Gd的BEUV辐射光谱。实验上研究激光-电流延时、电流幅值和激光功率密度等参数对Gd辐射光谱和等离子体状态的影响,与理论模型相结合,优化转换效率,修正理论模型,获得了实现较高功率6.7 nm(2%带宽)辐射输出的工作参数,为国内开展各项研究所需的BEUV光源和其他关键器件提供物理及技术支持。
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数据更新时间:2023-05-31
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