快脉冲放电制备尺寸可控纳米III族氮化物及光学特性研究

Because of the higher luminescence efficiency, enhanced third harmonic of non-linear effect and temperature-insensitive stimulated emission, nanosized III-nitrides are possible to be a kind of new type opto-electronic devices with wide applications. In this project, pulsed discharge was used to synthesize nanosized III-nitrides for the first time in the world. The optical properties of the synthesized materials were studied as well. The optimal discharge parameters and optimal ratio of the ammonia/nitrogen mixture were obtained by spectral diagnostics. High purity nanosized InN and InGaN have been synthesized. By choosing the discharge parameters, the nitrides with strong quantum confinement were produced. In the optical study on the synthesized materials, obvious blue shift of photo luminescence (PL) was observed. According to the theoretical calculation, this blue shift is due to the strong quantum confinement. The blue shift observed is well agreed with the calculated one. In the PL measurement of InGaN, the spectrum can be fitted as a wide band and a narrow peak. The intensity of the narrow peak was non-linearly increased as the pump power was intensified, showing the characteristic of stimulated emission.

III族氮化物纳米材料是开发短波长,可调谐,高效率光电子器件和非线性元件的理想材料.由于决定其光学特性的量子约束效应直接与尺寸有关,因此尺寸的控制具有十分重要的意义.本项目创造性地将氮气快速脉冲放电结合激光烧蚀用于研究尺寸可控的高纯纳米III族氮化物暮铣?并进一步研究其光学特性与尺寸的关系,为制备实用器件提供科学和技术依据.