双极器件氢致辐射损伤缺陷演化基本特征及机理研究

Bipolar devices (transistors and circuits) are employed for spacecraft as important electronic components. In the space environment, bipolar devices are sensitive to both ionization and displacement damage. The hydrogen species could be incorporated into the electronic devices either by design or accident in their fabrication and packaging processes. It is found that hydrogen, in its various forms (hydrogen molecules, hydrogen atoms or hydrogen ions), has an important and sometimes critical impact on the ionization and displacement radiation response and radiation resistance of semiconductor devices. Based on the gated lateral PNP transistors, the influence of various molecular hydrogen concentrations on ionization damage begins to be researched and characterized. Up to now, however, the mechanisms on the evolution of ionization and displacement radiation response due to various form hydrogen have not been understood. Understanding and predicting this effect are still ongoing topics of research. This situation limits an insight into the damage mechanisms of ionization, displacement and combined radiation effects for bipolar devices. Based on the irradiations of electrons with lower energy, protons with lower energy and heavy ions with higher energy, as well as the soaking of hydrogen in varying concentrations and injecting of protons with lower energies, this project will discover the basic characteristics and propose a universal defect physical model for the evolution of ionization and displacement radiation response in bipolar transistors, by means of three approaches, including the degradation characterization of electrical parameters, the annealing analysis after irradiation, and the measurement for microscopic defects. The obtained results can be used to optimize the resistant ability to radiation for the bipolar devices.

双极器件是航天器上应用的重要电子器件，在空间环境下易受到电离和位移辐射损伤。电子器件在生产制造过程中会有意或无意地引入氢杂质。研究发现，无论氢以何种形式(氢分子、氢原子或氢离子)存在，均会成为制约双极器件电离和位移效应的关键因素，直接影响器件的抗辐射能力。国际上已开始基于栅控横向PNP晶体管，研究氢气浸泡条件下双极器件电离效应的特征，尚未系统地研究不同形式的氢导致电离和位移缺陷演化的物理机制。这种状况尚难于提升人们对双极器件电离效应、位移效应及其协同效应损伤机理的认识。本项目拟在低能电子、低能质子及高能重离子辐照条件下，通过氢气浸泡及质子注入两种方式向双极器件及材料中引入氢，基于性能退化表征、退火效应分析及微观缺陷测试三种途径，揭示不同形式氢存在时双极器件电离效应和位移效应的基本特征，揭示氢诱导电离和位移损伤缺陷演化的物理机制。所得研究结果可为优化双极器件抗辐照能力提供理论依据。

双极晶体管是航天器上广泛应用的重要电子器件，在模拟或混合集成电路及BiCMOS电路中有着重要的作用。双极晶体管对电离和位移效应均较为敏感。电子器件在生产制造过程中会有意或无意地引入氢杂质。研究发现，无论氢以何种形式(氢分子、氢原子或氢离子)存在，均会成为制约双极器件电离和位移效应的关键因素，直接影响器件的抗辐射能力。因此，系统地研究不同形式的氢导致电离和位移缺陷演化的物理机制具有重要的理论和实际意义。本项目在低能电子、低能质子及高能重离子辐照条件下，通过氢气浸泡及质子注入两种方式向双极器件及材料中引入氢，基于性能退化表征、退火效应分析及微观缺陷测试三种途径，揭示了不同形式氢存在时双极器件电离效应和位移效应的基本特征，揭示氢诱导电离和位移损伤缺陷演化的物理机制。氢气浸泡促进了辐射诱导电离缺陷的累积，对位移缺陷影响不大。所得研究结果可为优化双极器件抗辐照能力提供理论依据。基于本项目，发表SCI论文9篇、申请国家发明专利11项、获得国防技术发明二等奖和全国辐射物理领域十大科技进展各1项，以及出版专著《抗辐射双极器件加固导论》1部。