HgCdTe的材料芯片方法研究
基本信息
结项摘要
针对碲镉汞材料工艺中遇到的基本物理特性体现的统计性特点，引入材料芯片研究方法对碲镉汞p-n结特性和形成工艺进行研究。应用材料芯片技术高效率、高可比性信息快速获取的优点、寻找出关于优质p-n结构的形成起着真正制约作用的物理起源。在统计性研究基础上，澄清p-n结形成中物理模型方面的争议，获得优化p-n结特性的具体可行方向。
项目摘要
项目成果
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数据更新时间：2023-05-31
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