Boosting the robustness against ever-harsher electromagnetic(EM) environment is indispensable for receiver front-end. Gallium nitride low noise amplifier (GaN LNA) is a suitable solution featuring outstanding robustness against EM interference. The recovery time and noise figure of LNA after pulse interference,which are two major parameters for robust LNA, are mainly subjected to active GaN device, but they have not been profoundly explored previously. This proposal will, from the perspective of device parameters, address key issues associated with the robustness of GaN LNA. The proposed studies include: (1) In light of our early study, AlN/GaN device with a novel composite barrier heterostructure (CBH) is speculated to extend the maximal safe operating power level, below which LNA can maintain nano-second recovery time. (2) With the help of an early diagnostic device-level test technique established by mimicking LNA operation, physical mechanism of the degradation of noise performance is explored, and physical correlation between the recovery time and the current-voltage (I-V) characteristics of the device is revealed as well. This application, which is an applied basic research integrating both the circuit performance and the device physics, is of great significance to enhance the robustness of RF front-end.
日益恶劣的电磁环境对接收机射频前端的抗电磁干扰能力提出了更高的要求,当前氮化镓低噪声放大器(GaN LNA)是提升该能力的主要技术途径之一。脉冲干扰后LNA的恢复时间与噪声系数是反映抗干扰能力的关键参数,主要受LNA中的GaN器件影响,但目前未被充分研究。本申请瞄准实现强抗干扰GaN LNA,从器件的角度对相关关键问题进行研究:(1) 基于申请人已发表的最新成果,提出新型复合背势垒结构(CBH)的AlN/GaN器件,特别适合扩大LNA在维持纳秒级恢复时间下的安全功率范围;(2) 借助本申请提出的器件层级模拟LNA工作模式的早期诊断测试方法,探明LNA噪声性能退化的物理机制,及揭示LNA恢复时间与器件的电流-电压(I-V)特性之间的关联机制。本申请属于将电路性能与器件物理相结合的应用基础研究,对增强射频前端的抗干扰能力具有重要意义。
GaN因其良好的强抗干扰性能,成为新一代高性能射频前端电路中的首要选择。本项目就如何进一步提高GaN LNA的抗干扰能力开展了研究。主要研究包括:1)分析GaN功率探测的原理,响应率与漏极偏置的关系,提出了GaN用于功率检测的可行性;2)探索了GaN器件有源区界面结构及表面钝化材料对脉冲恢复时间及鲁棒性的影响,得到AlN界面结构有利于减小LNA在脉冲后的恢复时间到纳秒级的结论;3)研究了不同钝化方式对GaN鲁棒性的影响,提出采用脉冲 I-V 特性与动态导通电阻测试的方法,揭示与验证器件性能的变化特征,分析了恢复时间、鲁棒性的影响机制,并提出了GaN LNA电磁抗干扰特性与器件的物理关联机制;4)开展了射频前端电路LNA、PA设计,提出LNA利用自偏置、感性源级反馈、RLC负反馈技术,获得了较高增益和增益平坦度、高的线性度和低的噪声系的方法;此外PA利用输入匹配网络(IMN)、级间匹配网络(ISMN)和变压器组合输出匹配网络(OMN),在ka/ku波段,获得较高的功率与增益的方法。本项目取得的成果:发表学术论文4篇,其中SCI检索期刊4篇;申请国家发明专利4项目。
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数据更新时间:2023-05-31
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