新型红外探测器

Infrared detection technique, one of the most important aspects of IR technique, makes great sense in fields of industry, agriculture, medical treatment and business, especially in military applications. All along, IRD is the core of IR technique, and the foreland and highlight in global scientific research. In IR technique field, the main problem is that thermal detector keeps low response speed and low detection sensitivity, while photo detectors work at low temperature with high speed and sensibility. In order to avoid the disadvantages, we raise a novel IRD with novel structure and mechanism. We at first realize a micro hermetic cavity and a micro detection structure, with MEMS and silicon integrated technology, and then enclose infrared sensitive gas in the cavity. The novel IRD, working at room temperature with bandwidth selectivity, high responsibility and speed, is accompanied with advantages of thermal and photo detector, and easy to manufacture on a large scale and convenient to use. Research results show that the detection mechanism is correct, the process design is feasible, and we took the lead in faster detect measurement of infrared radiation from 8μm to 14μm. The achievements of this task is listed below:.1.Succeeded in building theoretical model of the novel IRD, the first time confirmed functional relationship between absorbed infrared energy and capacitance variance of the IRD.2.Designed and optimized structure of the novel IRD.3.Succeeded in building completed technique process, including:a.Heavily boron doping in silicon for etch stop;b.Fabricating micro silicon gas cavity and release sensitive film using MEMS technique;c.Technique of micro film etching in EPW and its release method;d.Technique of electrostatic bonding between silicon and glass, and manufacture of static bonding devices;.e.Technique of heavy-natrium glass cavity etching;f.Research of silicon infrared window and technique of its fabrication;.g.Research of special infrared sensitive gas and the method of inflating special gas into micro hermetic cavity.4.Designing measurement method and building auto-measurement-system for the IRD performance testing.5.Fabricating successfully novel IRD samples, which works at room temperature with bandwidth selectivity. The characteristics is as follows:Withstand voltage: 310V .Initial capacitance: 320pF.Sensitivity: 32×10－3pF/mW Response time: 0.5s（Light source: carbon dioxide laser of 10.6μm wavelength）.6.Three doctors, three masters and two bachelors have graduated or will graduate, three papers have been published and others have been contributed.7.One national invention paten has been achieved, which possesses of independent intellectual property rights. The patent number is ZL99100398.5..The achievements greatly improve the IRD technique on selectivity of bandwidth from 8 to 14 μm, and establish theoretical and technical base for industrialization. Farther research and optimization will create great social and economic benefit. The novel IRD will exhibit wide prospects in military and civil areas.

研究出一种全新结构及机理的红外探测器，利用硅微机械加工技术及硅集成技术，实现一种可以在室温条件下工作，具有不同波段选择性的、响应度大的红外探测器，兼有热及光红外探测器的优点，便于规模生产。该探测器将在军事与民用方面有广阔的前景。....