空位引入量子点修饰的SnS2二维层状材料制备及其在柔性衬底上光探测器性能研究

The nature of suitable band-gaps and monolayer-stability enable 2D layered semiconductors as ideal candidates for application in photodetection, which require high performance in terms of speed and efficiency of photoelectric conversion. Monolayer to few-layer SnS2 NSs (nanosheets) have been synthesized by chemical vapor deposition (CVD) on carbon fiber, mica, and silicon substrates..SnS2 NSs especially can behave similar to ultrafast photodetectors with the rising time 5μs. However, its responsivity is limited due to its wide band gap, low photoelectric conversion efficiency. 2D-0D hybrid architectures have received considerable attention for their high performance as photodetectors. This structure benefits from strong light absorption, facile bandgap tunability, large scale manufacturability of quantum dots (QDs).Quantum dots growth induced by vacancies is an effective method to modulate electronic structures of 2D nanosheets steer charge flow at the atomic level for realizing the separation, transport, and consumption of charges in 2D nanomaterials Photodetector on a flexible substrate is fabricated using QDs /SnS2 NSs hybrid in situ. And the system performance of the photo detection is studied to realize applications of a QDs/SnS2 NSs hybrid on photodetector.

二维层状半导体由于其与传统的微制造技术的兼容性及其在柔性衬底上应用，具备在晶体管、光伏电池、宽谱光探测器及光电晶体管等应用领域的先天条件。SnS2层状材料具有2.1eV的带隙，同时目前SnS2纳米片已经实现了在硅衬底、碳布、云母等衬底上的CVD生长，尤其是SnS2纳米片构成的光探测器响应时间可达到5μs。但基于单纯二维层状材料构筑的光探测器都受到光吸收不足、光电转换效率不高等因素的影响，光探测性能不高。复合窄带宽半导体材料量子点可提高材料光响应范围，提高电子-空穴分离效率、降低载流子复合效率。但目前量子点与二维层状材料的复合大部分都是通过物理方法，量子点与层状材料无化学键作用，因此载流子的分离效率并没有达到最优化。在以前工作基础上，我们提出通过二维材料表面的S空位引导硫族量子点合成，构建0D-2D复合材料体系，引导光生载流子在原子级厚度的界面进行快速分离，并原位构筑高效的复合材料光探测器。

项目针对基于层状材料及其复合材料的光电探测器，设计用于宽光谱探测以及红外探测的0D-2D材料体系，构筑SnS2超薄纳米片与硫族半导体量子点复合材料光探测器。在项目资金支持下，系统研究了柔性衬底上，包括云母和碳布上包括SnS2在内的多种层状材料生长过程，生长机制，设计了多种量子点与层状材料复合材料体系。并探索了层状材料在光探测器、场效应晶体管、光催化等多个领域应用情况，为基于新型材料的高性能光探测器发展提供了思路。发表相关论文6篇，获取相关专利授权1项。项目完成时，培养硕士毕业生2名。项目负责人于2021年获得中国材料研究学会科学技术奖一等奖。