基于溅射法制备硒化锑薄膜及其太阳电池异质结界面性能研究

Sb2Se3 is one of the most promising solar cell absorber material, which has attracted many researchers' attention of in demestic and foreign areas recent years. The present application is based on the sputtering and H2Se selenization treatment method, which can realize a controllable Sb2Se3 film with a preferred growth direction of [hk1], determine the correlation between growth conditions and film phase, composition, preferred growth direction, and defect density, as well as clarify the influence of preferential growth direction on solar cell. These results lay a foundation for further improving the carrier transport capacity of Sb2Se3 thin film solar cell. By regulating the effective doping method and the amount of Sn, the intrinsic relationship between Sn doping and film carrier concentration will be established, and the mechanism of Sn increasing the carrier concentration of Sb2Se3 film is clarified. The key to restrict the carrier concentration of Sb2Se3 film will be revealed, which can provide experimental and theoretical basis for improving the electrical properties of V-VI series compounds. The thickness and deposition process of the deposited CdS in the first step and the second step will be determined, which is favorouble to construct a high-performance Sb2Se3 thin film solar cell. The matching mechanism between the buffer layer and the absorber will be explored in-depth and one set of theory and method for improving the V-VI compound will be summarized, which can also promote the development of Sb2Se3 thin film solar cell in solar cell filed.

Sb2Se3是一种很有潜力的太阳电池吸收层材料，近年来获得了国内外众多研究者的关注。本申请基于溅射并H2Se硒化处理方法，实现可控制备具有[hk1]择优生长方向的Sb2Se3薄膜，确定生长条件与薄膜物相、成分、择优生长方向、缺陷密度的关联作用，阐明Sb2Se3薄膜择优生长方向对电池性能的影响，为进一步提高Sb2Se3薄膜电池载流子输运能力打下基础。通过调控Sn的有效掺入方式和掺入量，建立Sn的掺入与薄膜载流子浓度的内在联系，阐明Sn提高Sb2Se3薄膜载流子浓度的机制，揭示制约Sb2Se3薄膜载流子浓度的关键因素，为改善Ⅴ-Ⅵ系列化合物电学性能提供实验、理论依据。确定第一步、第二步分别沉积的CdS的厚度及沉积工艺，构建高性能Sb2Se3薄膜电池，深入挖掘缓冲层与吸收层的匹配机制，总结发展出一套适用于提高Ⅴ-Ⅵ族化合物异质结界面质量的方法和理论，推动Sb2Se3薄膜电池在太阳电池领域的发展。

Sb2Se3材料具有物相简单、原材料便宜无毒且储量丰富的优势，非常有希望制备高效率、低成本、性能稳定的薄膜太阳电池。有效调控硒化锑薄膜的生长方向与电学性能是获得高转换效率太阳电池的关键。本项目首先通过对制备参数的优化，开展了高质量Sb2Se3薄膜的优化生长工作，为性能调控打下了坚实的基础；其次，本项目开展了Sn元素对硒化锑的电学性能影响的研究，掌握了Ⅳ族元素对Sb2Se3电学性能调控的规律，为后续工作的开展提供了重要的参考价值；再次，我们揭示了掺杂了的硒化锑的电子结构、光学性质和轨道占据状态的关系；最后，我们将Ⅳ、Ⅴ、Ⅵ主族其它元素掺入硒化锑中，获得不同电学、光学性能的Sb2Se3半导体。总而言之，本项目系统地研究了硒化锑薄膜生长条件与物相、成分、择优生长方向的关联作用，阐明了Ⅳ、Ⅴ、Ⅵ、Ⅶ主族几种典型元素掺杂对硒化锑能带结构、导电性、载流子迁移率的作用机制，深化和拓展了适用于调控Ⅴ-Ⅵ族化合物电学性能的方法和理论。