室温下快速、可控制备新型碳基二维半导体材料C3N高质量薄膜

The development of two dimensional (2D) materials provides an opportunity to the further development of microelectronic devices. However, the zero-band gap nature of intrinsic graphene, low mobility and stability of other 2D semiconductors impeded their practical applications in microelectronic devices. Thus, the discover of 2D semiconductors with high stability, quality and mobility is the key problem for the innovation of micro electronic technology. As a new type of 2D carbon-based semiconductor material, C3N has shown great potential applications in the field of microelectronic devices since its discovery because of its excellent stability, high mobility and a series of advantages. At present, the mainstream preparation approach of C3N relies on long-term coupling reaction under high temperature and high pressure. The preparation method is inefficient and uncontrollable, and the crystalline quality of the product poor, difficult to meet the basic physical properties of C3N research and practical application. Therefore, how to prepare high-quality C3N thin films rapidly, efficiently and controllably under room temperature has played a crucial role in basic physical properties and practical applications. This project aims to develop a controlled preparation of large-area, high-quality C3N films by Uv-assisted synthesis in a solution environment at room temperature, laying an important foundation for the innovation of C3N material preparation technology. Moreover, this project also aimed to carry out its early exploration of high-performance microelectronic devices applications.

二维材料的发现为微电子器件的进一步发展提供了契机。然而本征石墨烯零带隙的基本特性，其他二维半导体材料的低迁移率、低稳定性特性阻碍了其在微电子领域的实际应用。探寻高稳定、高质量和高迁移率的二维半导体材料对二维材料微电子器件的革新具有极其重要的意义。作为新型二维碳基半导体材料，C3N自发现以来，以其优异的稳定性、高迁移率等一系列优势，展现出在微电子器件领域的巨大应用前景。当前，C3N的主流制备方案依赖于高温、高压下的长时间偶联反应技术，该制备方法效率低、不可控、产物结晶质量差，难以满足C3N的基础物性研究与实际应用。因此，如何在室温下快速、高效、可控地制备高质量C3N薄膜对其在基础物性研究及实际应用领域起到至关重要的作用。本项目旨在发展室温下，溶液环境中的紫外辅助合成方法实现大面积、高质量C3N薄膜的可控制备，为C3N材料制备技术的革新奠定重要基础，同时开展其在高性能微电子器件的前期探索应用。

C3N的发现实现了碳基二维材料带隙打开的目标，为新型微电子器件的构建奠定了基础。传统的制备方法主要借助高温高压下的聚合偶联过程实现。相比之下，在常温常压下实现高质量大面积C3N薄膜的制备具有重要意义。本项目借助紫外辐照下2,3-二氨基吩嗪的有序偶联过程实现C3N薄膜的制备。在液相中，实现了大尺寸单层及多层C3N的制备。同时，实现了多层C3N薄膜的层数调制及堆垛调制。特别地，实现了AA及AB堆垛的双层C3N单晶薄膜的制备。基于此，通过半导体器件工艺、电学测试技术、理论计算等，对C3N的带隙性质、载流子迁移特性、拉曼光谱性质、界面性质等开展相关研究。发现了双层C3N在堆垛结构影响下的带隙变化。同时证明了双层C3N在电场下的带隙可调性。最后，我们开发了基于C3N的光探测器件、忆阻器、肿瘤可视化传感系统。本项目实现了常温常压下C3N高质量大尺寸薄膜的制备。同时，基本物性研究及器件构建为该材料的进一步发展奠定了重要基础。