碳基二维半导体材料C3N的可控制备、物性与器件研究

The development of 2D semiconductors with both high stability and carrier mobility is the key issue for the 2D microelectronics. As a newly discovered carbon based 2D semiconductor material, C3N shows obvious advantages over other 2D materials due to its high stability and carrier mobility. Thus, C3N has great importance and potential applications in the future 2D devices. This project aims at the preparation of high quality C3N as well as the frontiers of C3N, combined with the research basis of our group. We plan to realize high quality, large size C3N crystals and films through the hydrothermal, UV-assisted and PECVD methods; We will deeply investigate the lattice structure and electronic structure, study the physic properties, and figure out the structure-property relationship; We will construct C3N-based devices. This project will birng a brand-new 2D semiconductor and the new thinking/strategy for 2D materials and devices , which will accelerate the development of 2D microelectronics.

兼具稳定和高迁移率的二维半导体材料的发展是二维材料微电子学的材料学核心问题。新发现的二维材料C3N具有高稳定性与高迁移率，使其相较于其它二维材料具有突出优势，从而在二维材料微电子学领域具有重要的研究意义及广阔的应用前景。本项目针对C3N这一新型二维半导体材料的关键问题及前沿发展动态，结合课题组自身的工作基础开展相关研究。申请人拟采用水热/溶剂热、紫外辅助聚合以及PECVD三种途径制备大面积、高质量C3N材料；基于大面积、高质量的C3N进行其精细结构和电子结构的深入研究，探究C3N的基本物性，掌握C3N结构与物性的关联，为基于C3N的新型器件研究提供基础；并利用微纳加工技术，构建基于C3N的功能器件。本项目研究实现一种崭新的、稳定的、高迁移率的二维半导体材料，并为二维材料微电子器件研究领域带来新的思路/方法，加快推动二维材料微电子学的发展。

新型碳基二维半导体材料C3N的发现为二维微电子器件的构建提供了新机遇。实现大面积高质量C3N薄膜的制备并对其基本物性进行研究是发展这一新材料的基础。针对上述要求，本项目采用紫外诱导聚合及等离子体增强化学气相沉积法，实现单层C3N单晶膜及多晶膜的制备。同时实现了C3N层数控制及金属/半导体衬底表面的图案化生长。基于上述结果，结合半导体工艺、测试表征技术、理论计算（第一性原理和分子动力学），揭示了C3N的载流子迁移特性、界面性质、带隙性质、拉曼谱学等基本物性。同时，构建了基于C3N的光探测器件、忆阻器、肿瘤可视化传感系统。本项目为C3N的进一步发展及相关电子学器件的研发奠定了重要基础。