3D集成器件重离子单粒子效应地面模拟试验研究

3D packaged devices beak the vertical limitation of planar silicon technology, which achieve the high density of integration in device’s package. Its advantages such as small areas, little mass, low noise, and high performance show great potential to be used in space electronics. The complex single event effects (SEE) can be induced by cosmic rays due to the vertical structure of package in 3D packaged devices. This poses a challenge on ground accelerator test of SEE. In this project, the simulation model of SEE is firstly constructed based on the real 3D packaged device. The Monte Carlo method is used to study the properties of energy deposition and the impact of heavy ion parameters on SEE cross section in 3D packaged device. Besides, the influence of ion LET and range on SEE cross section are mainly investigated by heavy ion experiments. In terms of theory simulation and experimental result, the method to conduct a SEE test of 3D packaged devices is analyzed and the critical parameters to characterize the radiation response of 3D packaged devices are extracted. The works in this project will provide the guidance to the ground anti-irradiation test of 3D packaged devices.

3D集成器件突破了传统平面硅工艺器件的纵向限制，实现了集成电路在三维空间的高集成度封装，具有面积小、重量轻、低噪声、高性能等多种优势，在航天电子设备上展现了广阔的应用前景。由于3D集成器件的立体封装结构，宇宙射线将可穿过器件的多层晶体管灵敏单元，进而引起复杂的单粒子效应，给地面加速器模拟评估试验带来挑战。本课题一方面基于真实3D集成器件构建器件的单粒子效应仿真物理模型，利用蒙特卡洛方法研究重离子在3D集成器件结构中的能量沉积特性与重离子辐照参数对单粒子效应截面的影响规律；另一方面通过开展重离子辐照实验，重点研究重离子LET值与射程等关键参数对3D集成器件单粒子效应截面的影响。基于理论模拟与实验结果，综合分析开展3D集成器件重离子单粒子效应试验的有效方法，提取表征3D集成器件抗辐射可靠性的关键物理参量，为3D集成器件的抗辐射地面评估试验提供指导。

本项目针对先进3D集成器件重离子单粒子效应模拟试验的迫切需求，力求解决重离子在3D集成器件中能量沉积、瞬态响应以及电路响应等基础问题，解决3D集成器件单粒子效应截面数据有效获取与评估分析等理论问题，其难点在于器件敏感区在3D集成器件内部呈三维分布，如何全面有效的评估器件的单粒子效应敏感性面临巨大挑战。本项目重点完成了重离子在3D集成器件中的能量沉积特性分析、器件与电路瞬态响应特性分析、单粒子效应截面与LET值和射程相关性分析、以及高能重离子辐照试验技术与方法等研究内容；解决了3D集成器件内部多层灵敏单元的能量沉积与瞬态响应模拟仿真、LET值与射程在3D集成器件单粒子效应模拟试验中的有效性等关键问题；取得了3D集成器件重离子单粒子效应物理模型、高能重离子加速器模拟试验技术与方法等成果。其中，3D集成器件重离子单粒子效应物理模型可应用于3D集成器件抗辐射EDA模型的开发，3D集成器件高能重离子加速器模拟试验技术与方法可推动宇航级3D集成器件的抗辐射评估行业标准的落地。