重离子能量影响电子器件单粒子效应敏感性的物理机制研究

For single event effects in electronic devices, the energy dependency results in an inconsistency between the evaluation results produced by the low energy heavy ions in artificial facilities and the soft error rate induced by the higher energy heavy ions from real space applications. Along with the decrease in the feature size of the electronic devices, the energy dependency in single event effects becomes a more and more severe problem, and the underlying mechanisms are still under dispute from the existing researches. In this work, the simulation study will be performed to explore the underlying mechanisms of the energy dependency problem based on typical memories. The radial and temporal distributions of the energy deposition in the heavy ion tracks will be calculated in namometer-scale regions. The dependencies of the contributed mechanisms on the device structures will be explored. Furthermore, the contributions of different mechanisms related to the energy dependency will be compared. Then the soft error sensitivity to high energy heavy ions can be predicted based on the experimental results produced from the low energy heavy ions. This work is meaningful and useful in evaluating the effectiveness of radiation-hardened-by-design for electronics in space applications, selecting appropriate devices for system design and improving the radiation hardness assurance based on the particles produced by artificial facilities.

电子器件的单粒子效应能量相关性意味着依托地面模拟装置低能重离子开展的单粒子效应考核试验不足以表征空间辐射环境中更高能重离子引发的单粒子效应危害，导致地面考核后的电子器件在空间环境中表现出超出预想的性能退化甚至损伤。随着单粒子效应研究的持续深入和电子器件特征尺寸的不断降低，重离子能量对于电子器件单粒子效应敏感性的影响日益凸显，目前的研究中对物理机制的认识尚不深入且存在争议。本项目以典型存储器件为载体，对重离子能量影响单粒子效应敏感性的物理机制深入开展研究：获取纳米尺度内重离子横向径迹特征和时域演化特性；获取各作用机制与器件结构特征之间的依赖关系；进一步比较对于引发单粒子效应能量相关性的贡献，依据低能重离子辐照测试数据预测高能重离子对应的器件单粒子效应敏感性，为空间辐射环境中的器件防护设计、系统设计中器件选型、地面试验方法的改进等方面都能提供有益的参考。

随着特征尺寸的不断降低，电子器件的集成密度提高且版图结构更加复杂，由于相邻晶体管的物理间距减小，单个高能粒子引发的电荷共享效应或者单个入射粒子穿过多个敏感区域的可能性显著增加。本项目以典型单元电路为载体，为合理预测重离子垂直入射情况下电子器件的单粒子效应敏感性开展了一系列研究：对比计算纳米尺度内重离子横向径迹特征；基于仿真与试验手段评价金属互联结构对于器件单粒子效应敏感性的影响；提出一种重离子入射版图不同位置时的电流脉冲重构方法；确立了体硅CMOS工艺单粒子效应电路级仿真的完整流程；基于测试芯片的辐照试验结果校验仿真方法的准确性。研究成果可为进一步利用计算机模拟手段评价集成电路抗单粒子性能提供支持。