氮化镓基微纳等离子体波场效应晶体管

GaN-based Field effect transistors with nanometer gate lengthes are effective terahertz emitters, in which the mechanism is based on the plasma waves exction of two dimensional electron gas (2DEG) in the channel. This kind of terahertz emitter is advantageous because of its relatively simple structure and process, high power,tunable frequency and the ability of continuous work at room temperature etc, as a result it has great scientific research value and broad application prospects in many fields such as security check, medical imaging, environmental monitoring, food inspection,astronomy, satellite communications and weapons guidance and so on. .This project aims at the realization of terahertz emitters based on GaN field effect transistors.By studying the physical mechanisms of electromagnetic wave radiation generated by the plasma waves excitation of 2DEG, we could reveal the micromechanism of plasma waves excitation driven by electrons ballistic transport, establish the theoretical model of terahertz wave radiation by nanometer plasma wave field effect transistors, and solve the critical issues involved in structure designs, material growths and device processs.By means of optimizing the material structure and epitaxy growth process, with the application of advanced device processing technologies, we will realize prototype device of terahertz emitter.

GaN基微纳等离子体波场效应晶体管是基于二维电子气产生等离子体振荡从而辐射高频电磁波的太赫兹辐射源。这种太赫兹辐射源器件具有结构和工艺相对简单、频率和功率较高、频率可调以及可在室温下连续工作等优点，在安全检查、医学成像、环境监测、食品检验、射电天文、卫星通信和武器制导等应用研究领域均具有巨大的科学研究价值和广阔的应用前景。本项目瞄准太赫兹辐射源这一蕴藏巨大应用潜力的研究课题，通过对二维电子气等离子体振荡激发太赫兹电磁波的物理机制研究，揭示弹道输运电子触发等离子体波失稳的微观机理，建立微纳等离子体波场效晶体管太赫兹波发射的理论模型，解决结构设计、材料生长、器件研制中的关键科学难题，设计优化材料结构和外延生长工艺，结合新型的器件工艺技术实现太赫兹辐射原型器件。

GaN基微纳等离子体波场效应晶体管是基于二维电子气产生等离子体振荡从而辐射高频电磁波的太赫兹辐射源。这种太赫兹辐射源器件具有结构和工艺相对简单、频率和功率较高、频率可调以及可在室温下连续工作等优点，在安全检查、医学成像、环境监测、食品检验、射电天文、卫星通信和武器制导等应用研究领域均具有巨大的科学研究价值和广阔的应用前景。本项目研究了GaN基微纳场效应管中等离子波振荡激发太赫兹电磁波辐射的物理模型，以及器件几何尺寸对太赫兹波辐射频率和功率的影响关系；研制了用于等离子体波场效应晶体管制作的高二维电子气浓度、高电子迁移率的GaN基异质结构材料,二维电子气浓度达到2×1013cm-2,二维电子气迁移率达到2300cm2/v.s；并以理论模拟为依据，设计了器件版图，摸索和优化了欧姆接触、肖特基接触、注入隔离、叉指栅等器件工艺，研制出了等离子体波场效应晶体管原型器件,为该类型太赫兹辐射源的研究和应用奠定了良好的基础。