镧锶锰氧基多铁性复合薄膜磁电耦合的界面调控研究

The multiferroic composite films based LSMO have great potential value for multiple state memories, because it presents many advantages, including simple structure, and strong magnetoelectric effect (ME), and good compatible with modern information materials. But, the study about the effect of interface on ME coupling effect, and the physical relation beteen the magnetoelectric coupling mechanisms are rare. So, this project intend to prepared LSMO/BTO composite films by pulsed laser deposition. Then, we will explore the effect of LSMO/BTO interface oxygen vacancies and strain on the ME coupling effect, and clarify the the evolution of magnetoelectric coupling mechanism between charge movement type and stress transfer type, by means of the effect of annealing oxygen pressure and annealing.temperature on the magnetic and electric properties, magnetoelectric voltage coefficient, and electric transport property. The study of this project not only possesses important scientific value for the understanding of magnetoelectric coupling mechanism in LSMO based multiferroic composite film, but also is the necessary experimental and theoretical basis for its application in multi-state memory field.

镧锶锰氧(LSMO)基多铁性复合薄膜的结构简单、磁电效应强，与现代信息材料兼容性好，在多态存储领域具有巨大的潜在应用价值。界面调控是调节其磁、电等物性的有效手段，更是在原子级别控制其磁电耦合的关键。而关于界面对该类复合薄膜磁电耦合效应的调控规律，以及其中磁电耦合方式间物理关系的研究尚待进一步探索。本课题拟采用脉冲激光沉积方法，以LSMO/BTO多铁性复合薄膜为研究对象，结合其磁学性能、电输运性能和磁电电压系数随界面微结构参数的变化规律，研究界面对其磁电耦合效应的调控规律；通过考察LSMO/BTO复合薄膜磁电电压系数随LSMO薄膜厚度的变化，探明磁电耦合方式间的演化规律，揭示耦合方式之间的内在物理关系。本研究不仅对深入理解LSMO基多铁性复合薄膜磁电效应的界面调控规律和磁电耦合的物理机制具有重要的科学意义，而且对促进LSMO基多铁性复合薄膜在多态存储领域的应用也具有重要的现实意义。

镧锶锰氧(LSMO)基多铁性复合薄膜的结构简单、磁电效应强，与现代信息材料兼容性好，在多态存储领域具有巨大的潜在应用价值。界面调控是调节其磁、电等物性的有效手段，更是在原子级别控制其磁电耦合的关键。本课题采用脉冲激光沉积方法，制备了LSMO/BTO多铁性复合薄膜为研究对象，结合其磁学性能、电输运性能和磁电电压系数随界面微结构参数的变化规律，初步探明了界面对其磁电耦合效应的调控规律；得到了LSMO/BTO复合薄膜磁电电压系数随LSMO薄膜厚度的变化规律，并进一步探明了磁电耦合方式间的演化规律，揭示了几种耦合方式之间的内在物理关系。本研究不仅对深入理解LSMO基多铁性复合薄膜磁电效应的界面调控规律和磁电耦合的物理机制具有重要的科学意义，而且对促进LSMO基多铁性复合薄膜在多态存储领域的应用也具有重要的现实意义。