金属诱导非晶硅－锗－碳薄膜低温横向结晶技术
基本信息
结项摘要
金属诱导非晶Si—Ge—C系薄膜结晶技术是一项用新颖固相结晶技术研究制备微电子薄膜新材料的课题。本研究针对平面显示技术和三维集成电路用薄膜晶体管制造技术发展要求，用金属诱导横向结晶方法研究制备具有器件应用质量的多晶Si-Ge-C系薄膜，深入研究其物理化学过程、微观结晶机制，探索金属诱导横向结晶的多晶Si-Ge-C系薄膜在器件上的应用。
项目摘要
项目成果
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数据更新时间：2023-05-31
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