基于Si衬底GaN基多量子阱的多功能μ-LED阵列研究

As a source of information, the μ-LED array used for visible light communication has been a research spotlight. But there is few research on optical signal transmission under high power output and light detection for imaging sensing. This project is aimed at the abilities of electro-optical and optical-electro conversion for GaN-based multiple quantum wells on Silicon Substrate. Using a combination of theoretical simulation and experimental methods, the multi-functional μ-LED array integrated data transmission and imaging sensing is fully investigated. The research contents include: 1. High speed data transmission with high output power. Using back thinning technology, the lateral light transmission in membrane is suppressed that the crosstalk between μ-LEDs is reduced. A series and parallel hybrid circuits are designed to connect μ-LEDs with high bandwidth and high EQE for carrying out high output power and high bandwidth of the μ-LED array, simultaneously. 2. For imaging sensing. By using bandtail effect in quantum well, the mechanism of the μ-LED array under forward voltage capturing the limit cutoff wavelength of the optical signal is explored. Pixel blocks composed of series and parallel connected μ-LEDs can emit light signal and detect light for imaging at the same time, thus the integration of μ-LED array is improved. 3. Transfer to the foreign substrate. The substrate of μ-LED array can be removed and the array can be transferred to foreign substrate by using bonding and adhesives techniques, which are suitable for most commercial GaN-based MQWs on silicon substrate. The results of the project may improve the information device of IoT-based 5G communications.

μ-LED阵列作为信源一直是可见光通信研究热点，但在大功率光信号传输和光探测成像方向却少有问津。本项目利用Si衬底GaN基多量子阱材料具有电光、光电转换特性，采用理论模拟与实验相结合的方法，开展多功能μ-LED阵列研究。研究内容包括：1.用于大功率下高速通信。利用背后氮化物减薄技术抑制侧向光传输，减少μ-LED之间的串扰；利用单个μ-LED大带宽、高外量子效率等特点，设计串并联电路像素块，使阵列具有高输出光功率与大带宽。2.用于光探测成像。利用量子阱中的带尾效应，探索阵列在正向偏压下捕捉极限截止频率光信号的机理；利用串并联电路构成的像素块，实现在光信号发送的同时进行光探测成像，提高μ-LED阵列的功能集成性。3.转移至外部衬底。利用键合或粘合技术和商用Si衬底GaN基多量子阱体系材料，对μ-LED阵列实施衬底剥离和转移，拓展应用前景。该项目成果可助力于5G通信物联网信息器件的研发。

μ-LED阵列作为信源一直是可见光通信研究热点，但在大功率光信号传输和光探测成像方向却少有问津。本项目利用Si衬底GaN基多量子阱材料具有电光、光电转换特性，采用理论模拟与实验相结合的方法，开展多功能μ-LED阵列研究。研究内容包括：1.用于大功率下高速通信。利用背后氮化物减薄技术抑制侧向光传输，减少μ-LED之间的串扰；利用单个μ-LED大带宽、高外量子效率等特点，设计串并联电路像素块，使阵列具有高输出光功率与大带宽。2.用于光探测成像。利用量子阱中的带尾效应，探索阵列在正向偏压下捕捉极限截止频率光信号的机理；利用串并联电路构成的像素块，实现在光信号发送的同时进行光探测成像，提高μ-LED阵列的功能集成性。3.转移至外部衬底。利用键合或粘合技术和商用Si衬底GaN基多量子阱体系材料，对μ-LED阵列实施衬底剥离和转移，拓展应用前景。该项目成果可助力于5G通信物联网信息器件的研发。