基于硅通孔的微波无源器件建模研究

The project will research the modeling and microwave characteristics of microwave passive devices such as capacitor, inductor, filter, coupler, etc based on through silicon vias (TSVs). Fully combining the vertical interconnection characteristic and the huge idle space in the silicon substrate of chips, the structures of the microwave capacitor and inductor are proposed and the corresponding broadband RLC/RLCG equivalent circuit models are established. Combing the structures of the microwave capacitor and inductor and the electromagnetic coupling characteristic existed between all components, the structure of the microwave lumped filter is proposed and its broadband RLCG equivalent circuit model is established, and the structure of the microwave resonant coupling filter is proposed and its resonant cavity, coupling between resonant cavities, input and output, etc are optimized. The structure and its numerical analytical model are proposed, and the return loss, degree of coupling, directionality, isolation, etc are obtained. Furthermore, the influences of structural feature, structural parameter, material properties, all kinds of electromagnetic effects, etc of microwave passive devices using TSV on their microwave characteristic are deeply researched, and the schemes of design, optimization, and debugging are proposed to provide reliable technology guides and solid theoretical foundations for realizing the miniaturization of three-dimensional integrated circuits based on TSV.

本项目将基于硅通孔(Through Silicon Via, TSV)技术，研究微波电容、电感、滤波器和耦合器等无源器件的建模和微波特性。充分结合TSV的垂直互连特性和芯片硅衬底的巨大闲置空间，提出微波电容和电感结构，建立宽频带RLC/RLCG等效电路模型。结合微波电容和电感结构以及各元件之间的电磁耦合特性，提出微波集总滤波器结构，并建立宽频带RLCG等效电路模型，提出微波耦合谐振滤波器结构，并优化谐振腔、谐振腔耦合、外部输入输出等结构。提出微波耦合器结构和数值解析模型，获得回波损耗、耦合度、定向性、隔离度等指标的表达式。进一步深入研究基于TSV的微波无源器件的结构特征、结构参数、材料特性以及各种电磁效应等因素对其微波特性的影响，提出设计、优化、调试方案，为实现基于TSV三维集成电路的小型化提供可靠的技术向导和坚实的理论基础。

本项目针对传统平面微波无源器件占用面积大、性能差、难以三维集成等科学问题，研究基于硅通孔(TSV)技术的微波电容、电感、滤波器和耦合器等无源器件的三维结构、宽频带建模和微波特性。提出了Cu-CNT异质同轴TSV和同轴-环形TSV两种新型TSV结构，并建立了宽频带RLCG等效电路模型。考虑硅衬底的涡流损耗和高频导体的邻近效应，建立了高速信号-地TSV对的π型等效电路模型。充分结合TSV的垂直互连特性和芯片硅衬底的巨大闲置空间，并考虑TSV的结构特征和微波特性，提出了基于TSV的微波电容、电感、集总滤波器结构，建立了宽频带RLC/RLCG等效电路模型。提出了基于TSV基片集成波导的双层微波耦合谐振带通滤波器结构，并优化了谐振腔、谐振腔耦合、外部输入/输出等结构。基于同轴TSV结构和等效1/4波长传输线技术，提出了基于TSV的微波三维紧凑3 dB分支线定向耦合器并建立了宽频带RLCG等效电路模型。采用HFSS三维全波仿真验证提出的两种新型TSV和基于TSV的微波无源器件的等效电路模型，结果表明等效电路模型的计算结果和HFSS仿真结果匹配良好，误差极小。进一步，深入研究了基于TSV的微波无源器件的结构特征、结构参数、材料特性以及各种电磁效应等因素对其微波特性的影响，提出了设计、优化及调试方案，实现了微波无源器件硅基三维集成化和灵活配置的设计目标。本项目的研究成果可为未来基于TSV的高密度三维集成电路(3-D IC) 提供可靠的技术向导和坚实的理论基础，推动核心微波电路系统的小型化、轻量化、低成本化、多功能化以及高可靠性进程。