半导体中类氢杂质原子的量子混沌行为研究

By using an unusual photoconductive spectra technology, it is demonstrated that the longitudinal optic (LO) phonon-induced Fano resonance instead of the traditional kinetic mechanism. The CR line shapes are analyzed by calculating the high frequency conductivity. The result is attrituted to the structural defects, disorder or inhomogeneities. When considering Be shallow acceptor states in GaAs, the photothermal ionization spectroscopy shows that the transitions are attributed to the ground state to the excited states. Also the nonlinear optical properties of some GaAs and low-dimensional structures are performed. For example, the two-photon process and the renormalization of the energy level from impurity effect. The transition from the impurity electron states to the high energy level stats are performed. The evolution of the transition rule is found to be related with the inhomogeneities of the defects at different magnetic field. Some important results are being analyzed.

.. 均匀磁场中的氢原子一直是量子混沌研究中最受关注的一个体系，与氢原子具有类似特性的半导体中的浅杂质原子是半导体中最重要的一类杂质，而其在磁场中的混沌运动却从未被研究过。本课题拟采用高灵敏度的杂质光电导光谱技术，在适当的标度化的能量范围内，对几种典型的半导体材料和结构中的类氢杂质能谱进行深入研究，获取其有关混沌运动的信息。