锑化物I型量子阱组分调控及其窄线宽激光器研究

The 2-5μm wavelength range is the important atmospheric window. The development of 2-5μm laser source is important for the applications such as air-monitroing, chemical detection and remote sensing. Now, the research work are mainly about materials epitaxy and device design, but few reports about antimonide laser with narrow linewidth. In order to meet requirements of laser source on gas detection. We are proposing a research project including InGaAsSb/AlGaAsSb quantum well laser materials epitaxy, device design and properties investigation. To solve GaSb based four elements alloys component and narrow linewidth laser output problems. For high activity of Sb molecule and As molecule with low rate, we use Sb2/Sb4 mixed beam to control and reduce activity of Sb molecule, then As2 and (Sb2/Sb4 ) method is proposed, whicn can enhance the binding rate of As molecule, achieve the objective of alloys component adjustment. By the effective refractive index perturbation grating structure, we can obtain laser beam with narrow linewidth. The result will be the an important significance for gas detection.

2-5μm波段是重要的大气窗口，针对该波段发展应用于大气污染监测、传感等技术的激光光源具有极为重要的研究意义。目前锑化物激光器在波长拓展和功率提升等方面取得了一定进展，而在满足气体探测领域所需的窄线宽激光方面研究较少。本项目将开展InGaAsSb/AlGaAsSbI型量子阱激光器材料外延和器件工艺两方面研究工作，通过四元合金组分控制实现对量子阱、波导层和限制层的精确调控，提高激光输出可控性，通过合理的光栅结构提高激光输出质量。针对As分子结合率低的问题，采用Sb2/Sb4混合的Sb束流，从调控降低Sb分子活性角度，提出As2和(Sb2/Sb4)构成V族元素混合束流方案，有效提高As分子结合率，实现对合金薄膜组分的精确控制。将有效折射率微扰光栅结构应用于锑化物激光器实现窄线宽激光输出。

本项目开展了“锑化物I型量子阱组分调控及其窄线宽激光器研究”的工作，从InGaAsSb/AlGaAsSb I型量子阱激光器材料外延和器件工艺两方面来实施。采用分子束外延技术生长高质量GaSb、GaAsSb、InGaAsSb和AlGaAsSb薄膜及GaAsSb/AlGaAs、InGaAsSb/AlGaAsSb量子阱结构，研究了薄膜及量子阱的发光特性，并通过掺杂和快速热退火手段有效的改善了其发光特性；针对锑化物激光器制备工艺过程中的难点，提出了独特的刻蚀技术，优化了工艺流程；通过对量子阱、波导层和限制层的精确调控，提高了激光输出可控性，将有效折射率微扰光栅结构应用于锑化物激光器，实现线宽<10MHz激光输出。本项目为高性能半导体激光器的开发提供了思路和方法。