新型平栅极表面传导电子发射源的制备及发射特性研究

Field emission electron source can emit electron without the addition of energy, which have their potential applications in electron energy disperse spectroscopy, material analysis instrument and luminescent device, etc. However, the working voltage of traditional planar-gate electron-emission source is high and the emission efficiency of surface-conduction electron-emission soruce is very low, which may limit their application.The electric field strength distributions near the cathode electrodes and the electron trajectories of electron-emission source were simulated by ANSYS. The structure parmaeters of a planar-gate surface-conduction electron-emission are optimized by simulation results. A novel planar-gate surface-conduction electron-emission source with nano-oxide emitters has been fabricated by magnetron sputtering, conventional photolithography, lift-off and synthetic technique of emission emitters.Nano-oxide emitters deposited on cathode electrodes are used as field emission electron source and Nano-oxide emitters deposited on the gap between the cathode and gate electrodes are regarded as surface-conducted electron sources. We study the influence that the structure parameters and working voltage affected on the field emission uniformity, stability and electron-emission efficiency by the modulation of gate voltage. The electron emission and transmission mechanism between metal electrodes and field emission electron source were investigated. On the other hand, secondary emission and transmission mechanism between part electron emitted from field emission source and surface-conducted electron source were also investigated. The electron trajectories in the vacuum were studied and the emission mechanism of the planar-gate surface-conduction electron source was discussed. The theoretical basis may be established in the electron emission source of self-dependent innovation.

场致发射电子源不需外加能量就可使电子逸出发射体表面，在电子能谱仪、材料分析仪和发光器件等领域广泛应用。传统的平栅极和表面传导电子发射源因结构简单而成为研究热点；然而，平栅极电子发射源工作电压高，表面传导电子发射源的发射效率低，限制其应用。因此，本项目以平栅极表面传导电子发射源为研究对象，利用Ansys软件模拟该电子发射源表面电场分布和电子运动轨迹，优化其结构参数。利用磁控溅射、光刻、剥离和发射源的沉积技术，制备纳米氧化物结构的平栅极表面传导电子发射源。采用结构中的纳米氧化物作为场致发射电子源和表面传导电子源，栅极为调控电极，研究发射源的结构参数和工作电压对其电子发射均匀性、稳定性和效率的影响；研究电子在金属电极和场致发射源之间的激发与传输机制，研究从场致发射源中发射出的电子与传导源的二次激发与传输机制，研究电子在真空中的运动轨迹，探讨其发射机理，为实现自主创新的电子发射源结构奠定理论基础。

本项目以平栅极表面传导电子发射源为研究对象，开展了基于ZnO纳米氧化物的平栅极表面传导电子发射源的研究。在电子源发射材料方面，采用热蒸发和水热法成功制备了具有优异场发射性能的ZnO纳米结构，并获得了热蒸发的反应温度和反应时间对原位生长ZnO纳米线的表面形貌、成分和微观结构的影响规律，以及水热法的反应溶度和反应时间对ZnO纳米氧化物的表面形貌、成分和微观结构的影响规律。在器件方面，利用磁控溅射、光刻和湿法刻蚀技术，结合原位生长技术（热蒸发和水热法）制备了低压驱动和高发射效率的ZnO纳米氧化平栅极表面传导电子源；此外，结合喷墨打印成功获得高性能的ZnO电子发射源，为场发射器件制造提供了一种简便、经济、环保的图形化自组装技术。同时开展了部分基于液晶透镜的2D/3D可切换显示的预研工作。在基金资助下共发表学术论文19篇，其中以第一作者和通讯作者发表SCI/EI论文16篇，授权国家发明专利8件。