半导体纳米微结构材料中的电磁诱导泰伯效应及其调控研究

The Talbot effect, also referred to as lensless imaging, is finding important applications in many fields, such as lithography, optical precision testing, optical switching, optical array illumination, and optical micro-control. In recent years, studies on the Talbot effect in quantum optics have gained considerable interest, especially, the proposal of electromagnetically induced Talbot effect, which combines the phenomenon of electromagnetically induced transparency into it, opens up a new direction for its application in the field of quantum information. Basing on the inherent properties of the semiconductor material and its advantages in practical applications, this program will carry out the investigations of the electromagnetically induced Talbot effect in the semiconductor nano-structures. We will study the influence of the inherent properties of the semiconductor system, e.g., Fano interference effect, on the Talbot imaging and we will discuss the effects of the control of the coherent field, the extra bias voltage or the positions of the detectors on the Talbot imaging. Furthermore, we will look for the effective quantum coherent control methods of the Talbot imaging and inquire into the potential application value of the Talbot imaging in semiconductor nano-structures.

泰伯（Talbot）效应，又称为无透镜成像现象，在光刻、光学精密测量、光开关、光学阵列照明和光学微操控等诸多领域有着重要的应用。近几年来，量子光学领域中的Talbot效应研究，引起了人们的关注，尤其是将Talbot效应与电磁诱导透明相结合的电磁诱导Talbot效应的提出，为Talbot效应在量子信息领域的应用开辟了一个崭新的方向。本项目拟结合半导体纳米微结构材料自身特性及其在应用中的优势，展开半导体纳米微结构材料中的电磁诱导Talbot效应研究。研究半导体系统自身特性（如Fano干涉效应等）对Talbot成像的影响，探讨相干场、外加偏压或探测器位置等调控对Talbot成像效果的影响，探讨对Talbot成像进行量子相干调控的有效手段，并进一步探讨半导体纳米微结构材料中Talbot成像的潜在应用价值。

电磁诱导泰伯效应在量子光学和量子信息等相关领域具有巨大潜在应用价值的一种光学衍射现。本项目主要结合半导体纳米微结构材料的独特结构和优异性能，开展了半导体纳米微结构材料中的电磁诱导泰伯效应的量子调控研究。首先，基于非对称双量子阱结构中的隧穿诱导透明效应，利用强驻波电磁场可以实现电磁诱导光栅的近场自成像；其次，基于纠缠光源的鬼成像原理，研究了电磁诱导二阶泰伯效应，该自成像具有非局域性和大小可控性。这些结果在量子光学微操控、量子检测等方面有潜在的应用价值。