超低功耗基准源架构及关键技术研究

With the increasingly harsh requirement of low power consumption, the design of voltage references, which is one of the key modules in electronic systems, is also faced with low-power-dissipation challenges. In order to overcome the restrictive relation between low power consumption and high performance of current voltage references, this proposed project is going to develop the researches on architectures and key technologies of ultra-low power voltage reference. Combined with the knowledge of physics, devices, and circuits, the influences of various voltage reference architectures on critical parameters, such as power, power supply rejection ratio (PSRR), temperature coefficient, and so on, will be analyzed in detail in this proposed project. This will essentially reveal the factors affecting the performance indicators of low power voltage references, and the design methodology of ultra-low power voltage references will be established. Besides, ultra-low power temperature linearization and wide-band multi-loop-assistant PSRR enhancement techniques will be also proposed. Detailed parameter temperature models and power-supply noise network models will be presented to fundamentally improve the wide-range temperature stability and wide-band power supply stability. In this way, the required theoretical foundation and guiding idedogy will be formed. What’s more, based on the modularization establishment of key-technology circuits, various high-performance ultra-low-power voltage reference architectures will be builded to break the constraints between power dissipation and performance in voltage reference. With the help of specific realization methods, the correctness of theories and practicability of actual circuits of the proposed project will be validated.

随着低功耗要求的日益苛刻，基准源作为电子系统的核心模块之一，其设计同样面临着功耗要求挑战。为了克服当前基准源架构无法克服低功耗与高性能的相互制约关系，本项目拟开展超低功耗基准源架构及关键技术研究。结合物理、器件及电路知识，深入分析各类基准源架构对功耗、电源抑制比及温度系数等重要参数的影响，从本质上揭示影响低功耗基准源性能指标的因素，形成超低功耗基准源设计方法；提出超低功耗温度线性化及宽带多路径辅助电源抑制性能提升技术，建立完善的参数温度模型及电源噪声网络模型，从底层上提升超低功耗基准源宽温稳定性及宽带电源稳定性，构成研究所需的理论支撑与指导思想。基于核心技术电路的模块化建立，构建多种高性能超低功耗基准源架构，突破功耗与性能在基准源中的制约关系，并提出具体电路实现方法，验证理论的正确性与实际电路的实用性。

电压基准源由于可以提供稳定可靠的参考信号，几乎在所有的电子系统中都占据着不可替代的地位。电压基准源的性能直接影响着整体电子系统的品质，因此高性能基准源在纯模拟电路，混合信号电路及纯数字电路的应用有着极为广泛的应用前景。.为了克服当前基准源架构无法克服低功耗与高性能的相互制约关系，本项目开展了超低功耗基准源架构及关键技术研究。结合物理、器件及电路知识，深入分析各类基准源架构对功耗、电源抑制比及温度系数等重要参数的影响，从本质上揭示影响低功耗基准源性能指标的因素，形成超低功耗基准源设计方法。建立完善的参数温度模型及电源噪声网络模型，从底层上提升超低功耗基准源宽温稳定性及宽带电源稳定性，构成研究所需的理论支撑与指导思想。.基于提出的理论支撑与指导思想，分别从温度，电源抑制比，低功耗方面提出了针对性的提升方案。依据基准源核心元器件特性，分别建立了带隙基准源和非带隙基准源设计方法及理论。提出了阈值电压提取方法；高阶复杂温度曲线拟合设计方法；温度区间优化设计方法；阈值电压温度互补非带隙基准源设计方法；阈值电压与热电压互补非带隙基准源设计方法；亚阈值温度线性化设计方法；噪声重建消除技术；宽带多路径辅助电源抑制性能提升技术；自偏置电流复用技术。基于上述的部分设计方法，结合不同的应用环境需求，本项目设计完成了多种高性能低功耗基准源架构，并完成了具体电路设计工作，其涵盖了绝大部分的基准源类型，具体为带隙基准源、工作于亚阈值区的CMOS基准源、无电阻基准源和时间域基准源。.在本项目的支持下，已申请发明专利16项，获授权中国发明专利10项，美国发明专利4项；在国内外期刊和会议上发表论文29篇，并在IEEE国际会议上做报告11次，含邀请报告3次；获得四川省技术发明二等奖一项，全国大学生集成电路创新创业大赛全国特等奖2次；培养博士研究生2名，硕士研究生10名。