宇航环境下累积损伤对SOI工艺集成电路电磁兼容性的影响

With the progress of three-step plan for China’s space program, in order to fulfill the needs of the aerospace instruments, numbers of electronic systems need to be miniaturized and integrated. The electromagnetic compatibility (EMC) problem is becoming more serious and moving from system level to circuit level. The harsh space environment where the devices suffer total ionizing radiation and intrinsic degradation mechanisms induces the cumulative damage in semiconductors, which could lead to a drift of the physical parameters of device. Thus the characteristics of circuit are affected which resulting in the degradation of integrated circuit (IC) electromagnetic compatibility. From the circuit design point of view, we could not only consider the initial EMC level just after the production, but also to evaluate the long-term electromagnetic robustness (EMR) of IC in the harsh space environment.. The project aims at studying the IC’s electromagnetic susceptibility (EMS) performance of Silicon on insulator (SOI) technology with radiation hardened by design, evaluating the impact of cumulative damage on IC electromagnetic susceptibility to interference. .The frame of this project includes: the study and modeling of cumulative damage in device induced by total ionizing dose effect (TID) and the intrinsic failures; circuit performance degradation due to device cumulative damage; modeling of the impact of cumulative damage on EMS of ICs. . We expect through the research of this project, we can build the platform of integrated circuit EMC test and modeling for the device in aerospace applications. With the experience of EMR experiments and simulation, we can provide the guideline in circuit design to meet the EMC standard both for initial state and final state. .

随着我国航天事业的发展，大量电子系统需要被小型化、集成电路化，使系统的电磁兼容问题愈发严重且主要集中在芯片级上。空间环境中的电离辐射以及长期工作中器件的内在失效机制引起的累积损伤会导致器件的物理参数漂移，从而影响电路的特性，导致芯片的电磁兼容性降级。我们不仅要考虑芯片生产初期的电磁兼容性，更要评估芯片在宇航环境中的长期电磁兼容可靠度。. 本课题对SOI抗辐照工艺集成电路的电磁敏感度展开研究，分析宇航环境及长期工作引起的器件累积损伤对电路的电磁敏感度影响机理。具体包括：由总剂量及器件内部失效机制引起的累积损伤测试及建模；电路的输出特性受器件累积损伤影响评估；SOI抗辐照工艺电路的电磁兼容性模型仿真；芯片的电磁兼容性受器件累积损伤影响评估；. 期望本课题可为国内宇航芯片的电磁兼容性的测试和建模仿真奠定基础。通过对芯片长期电磁兼容可靠度的评估，在设计阶段提供整改建议。

随着我国航天事业的发展，大量电子系统需要被小型化、集成电路化，使系统的电磁兼容问题愈发严重且主要集中在芯片级上。空间环境中的电离辐射以及长期工作中器件的内在失效机制引起的累积损伤会导致器件的物理参数漂移，从而影响电路的特性，导致芯片的电磁兼容性降级。我们不仅要考虑芯片生产初期的电磁兼容性，更要评估芯片在宇航环境中的长期电磁兼容可靠度。.本课题对SOI抗辐照工艺集成电路的电磁敏感度展开研究，分析宇航环境及长期工作引起的器件累积损伤对电路的电磁敏感度影响机理。具体包括：由总剂量及器件内部失效机制引起的累积损伤测试及建模；电路的输出特性受器件累积损伤影响评估；SOI抗辐照工艺电路的电磁兼容性模型仿真；芯片的电磁兼容性受器件累积损伤影响评估；.期望本课题可为国内宇航芯片的电磁兼容性的测试和建模仿真奠定基础。通过对芯片长期电磁兼容可靠度的评估，在设计阶段提供整改建议。