大位移反铁电陶瓷／形状记忆合金集成、驱动机理研究

The integration of RAINBOW made from ferroelectrics and anti-ferroelectrics and shape memory alloy (SMA) was fully researched. The manufactures and properties of integrating units were also studied, which presented several conclusions as listed following: RAINBOW units made from ferroelectrics (PZT, PLZT) & anti-ferroelectrics (PSZT) were.successfully fabricated by chemical deoxidization in high temperatures, and.the optimal fabricating process were got. The distribution of stress inside the.RAINBOW structure was given by the FEM (finite element method) and the.optimization was put forward then. The dynamics and reaction mechanism during the.deoxidization were given. The microstructures, interfaces of RAINBOW were analyzed in detail, so the mechanism of it’s repture was given. The properties and their influencing conditions were studied, the largest axial displacement got is about 270μm, which is much larger than that of traditional piezoelectric ceramics. The integrated units were fabricated successfully by sputtering, whose microstructure, interface and the mechinism of destruction were also studied. At last, the mechanics and actuating properties of the integrated units under the heat, force, and electric field were also analyzed.

将反铁电陶瓷与形状记忆合金集成构成驱动元件，在集成过程中利用形状记忆合金的回复力在反铁电陶瓷内部形成预应力和应力偏移，降低反铁电陶瓷的相变电场，并提高承载能力。在驱动过程中利用反铁电陶瓷在电场作用下发生的相变及形状记忆合金在电流作用下在发生的相变，使集成元件获得较大的位移和驱动力，为结构驱动提供性能优良的新型驱动元件。