半导体的真空紫外光化学直接刻蚀研究

As a new technology, this project ended the synchrotron radiation(SR).act as unique photon source in ultraviolet radiation(VUV) excited direct etching field. A VUV photon-etching facility with hollow cathode lamp was constructed, which is much cheaper than that with synchrotron.radiation one. By this facility, a direct etching experiment on the group.of GaAs/Cl2+He was fulfilled.On the same machanism, a theoretic supper.hard C3N4 film was deposited by SR assisted CVD, which is area selected.and its effective photons range from soft x ray to VUV. All of such two.experiments are reported for first time

用120nm附近的真空紫外光，不需要光刻胶就能将掩模图型直接转移到半导体上。刻蚀精度瘸９孀贤夤饪炭商岣咭槐叮夜ひ毡茸贤夤饪碳虻ァＪ窍乱淮硐氲奈⒌缱雍臀⒒抵圃旃ひ铡１鞠钅苛⒆阌谔剿鞔丝淌垂ひ眨芯堪氲继宓谋砻鎂UV化学反应机理，建立反应直接刻蚀的基本模型。