MEMS/GMR集成磁传感器的稳定方法研究

MEMS technologies are effective approaches for developing high performance micro-sensors. The integration technology of MEMS/GMR magnetic sensors will improve the GMR performance by 2-3 orders, but the applications of the integrated magnetic sensors are severely restricted by their unstability. This program will focus on MEMS/GMR magnetic sensors and deeply investigate the subjects including the mathematical model of the integrated magnetic sensor based on the vibration of the soft magnetic micro structures, the energy dissipation mechanism and its heat effect law, low power-consuming designs of the MEMS driving structures, local thermal field smoothing and the compensation of the environmental disturbance and the heat effect from energy dissipation, and mainly solve the key scientific problems including the energy dissipation mechanism, non-uniform distribution regularity of the thermal stress and its effect on the vibration of MEMS structures, and master the technologies including multi-field analysis of MEMS driving structures, closed-loop control of the vibration amplitude and the high precision alignment of the sensor key components, uncover the influence law of non-uniform thermal stress on the MEMS driving structures of the integrated magnetic sensors, present a smoothing method for local thermal field gradient with targeted thermal conduction, and finally build a set of methods for improving the stability of integrated magnetic sensor, to provide theory and technology supports for the practicability of the MEMS/GMR magnetic sensors and to provide important guidances to the research on other MEMS sensors.

MEMS技术是发展高性能微传感器的一条有效途径。MEMS/GMR集成磁传感器较GMR本身的主要性能指标可提升2-3个量级，但稳定性问题严重制约了其实用化。本项目以MEMS/GMR集成磁传感器为对象，深入研究基于软磁微结构振动的传感器数学模型、能耗机理及其热作用规律、MEMS驱动结构低能耗设计、局域温度场梯度平滑以及环境扰动和能耗热作用的补偿控制等内容，重点解决传感器能耗机理、非均匀热应力分布规律及其对MEMS结构振动的影响等关键科学问题，突破集成磁传感器多物理场分析、振幅闭环控制和关键结构高精度对准等关键技术，揭示集成磁传感器中非均匀热应力对MEMS驱动结构的影响规律，提出一种定向热传导的局域温度场梯度平滑方法，并最终建立一套较为完善的集成磁传感器稳定性提升新方法，为增强集成磁传感器的实用性提供有力支持，同时也为其他MEMS传感器研究提供重要指导。

MEMS技术是发展高性能微传感器的一条有效途径。MEMS/ GMR集成磁传感器较GMR自身的主要性能指标可提升2-3个量级，但稳定性问题严重制约了其实用化。本项目针对MEMS/GMR集成磁传感器的稳定性问题，深入研究了基于软磁微结构振动的传感器数学模型、能耗机理及其热作用规律、MEMS驱动结构低能耗设计、环境扰动和能耗热作用的补偿控制等内容，解决了传感器能耗机理、热应力分布规律及其对MEMS结构振动的影响等关键科学问题，揭示了集成磁传感器能耗热作用和环境温度变化对MEMS压电振动结构的影响规律，突破了集成磁传感器机-电-热-磁多物理场耦合分析、基于高精度信号检测的补偿控制和多物性微结构三维高精度组装等关键技术，建立了一套较为完善的集成磁传感器稳定性提升新方法。研究成果既可为增强集成磁传感器实用性提供关键理论与技术支持，也可为其他MEMS传感器研究提供重要参考与指导。研制的新型集成磁传感器样机经国防工业一级弱磁计量站测试，其测量范围100000nT，分辨力达到0.046nT；发表高水平学术论文13篇，SCI论文7篇，另有一篇论文投稿于磁学主流期刊IEEE. Trans. Mag，在审；申请发明专利10项，已授权5项；培养了中物院参研青年人才2名，博士研究生3名，硕士研究生5名（全部按原方向继续攻读博士学位，其中1人赴英国曼彻斯特大学诺贝尔奖团队联合培养）；1篇博士论文获中国仪器仪表学会全国优秀博士学位论文和全军优秀博士学位论文，1篇博士论文获湖南省优秀博士学位论文；全国仪器科学与医学工程博士生论坛（国务院学位办主办）一、二等奖各1人；1名成员入选了国家留学基金委“未来科学家”项目首批资助（全国49人之一）。取得的成果超出预期目标。