La1-xSrxMnO3/In-MgZnO全氧化物外延异质结器件的制备与性能研究

This project presents to grow all-oxide epitaxial p-La1-xSrxMnO3/n-InMgZnO thin film heterojunction diodes with good electrical and magnetic properties on lattice-matched single-crystal substrates, in which the n-type In-MgZnO oxide alloy films have been explored in detail with the structural, electrical and band gap properties in the previous NSFC project. The rectifying properties of the heterojunction diodes with different doping concentration of p-La1-xSrxMnO3 film and n-InMgZnO film would be studied, and the carrier transportation at the interface between p-type and n-type films and mechanism of the origin of the current in heterojunction should be analyzed. The resistivity of the La1-xSrxMnO3 film and the rectifying properties of the heterojunction diodes under different intensities of the external magnetic field would be explored in order to obtain the diodes with excellent magnetic-sensitive property, and the transportation mechanism of the carrier in diode under the external magnetic field will be analyzed. The electrical and magnetic properties of the diodes under different temperatures would be explored, which aims to show the operation feasibility of the diodes under high temperature. In addition, the La1-xSrxMnO3/InMgZnO heterojunction diodes would be epitaxially grown on Si substrate to verify the potential application of the diodes in large scale intergrated circuit.

本项目提出利用青年科学基金项目中已经系统生长的In-MgZnO合金薄膜作为n型氧化物半导体材料，与p型La1-xSrxMnO3薄膜结合，在晶格常数匹配的单晶衬底上外延生长全氧化物La1-xSrxMnO3/InMgZnO薄膜异质结器件，器件具有良好的电学性能与磁学性能。系统研究不同掺杂比例的p层与n层薄膜所制备器件的整流性能，分析器件的界面电子传输与异质结电流产生机理；系统研究外加磁场变化作用下La1-xSrxMnO3薄膜的电阻率与异质结器件整流性能的变化，获得性能优良的对磁场敏感的电子器件，分析磁场作用下器件载流子的传输机理。同时研究温度变化条件下器件的电学、磁学性能变化，验证La1-xSrxMnO3/InMgZnO异质结器件的高温可操控性。在此基础上，在Si衬底上外延生长La1-xSrxMnO3/InMgZnO器件，验证器件与大规模集成电路集成的可行性。

利用脉冲激光沉积法生长In-MgZnO合金薄膜作为n型氧化物半导体材料，与p型La1-xSrxMnO3薄膜结合，在晶格常数匹配的单晶衬底上成功制备了全氧化物 La1-xSrxMnO3/InMgZnO 外延薄膜异质结器件，器件具有良好的电学性能与磁学性能。确定了薄膜的沉积工艺参数及工艺参数对结构、器件性能的影响规律。系统研究了不同掺杂比例的p层与n层薄膜所制备器件的整流性能，分析了器件的界面电子传输与异质结电流产生机理；系统研究了外加磁场变化作用下 La1-xSrxMnO3 薄膜的电阻率与异质结器件整流性能的变化，获得了性能优良的对磁场敏感的电子器件，分析了磁场作用下器件载流子的传输机理。研究了温度变化条件下器件的电学、磁学性能变化，验证了La1-xSrxMnO3/InMgZnO 异质结器件的高温可操控性并确定了器件的可操控温度范围。在此基础上，在 Si 衬底上外延生长了La1-xSrxMnO3/InMgZnO器件，验证了器件与大规模集成电路集成的可行性。