纳米铜铟硒基半导体/多孔配位聚合物复合材料的设计合成及光电性质研究

CuInSe-based nano-semiconductor is an important member of IB-IIIA-VIA group compounds with a band gap of 1.55 eV，which has been considered as one of the most popular and promising candidates as absorbing materials for solar cells because of its high absorption coefficient and environmental consideration. CuInSe-based semiconductors are often called direct band gap semiconductors,and the band gaps of CuInSe-based semiconductors are insensitive to changes in temperature. However, despite some recent record efficiencies, research on solar cells materials is still a long-term research tasks for improving the photoelectric conversion efficiency. Porous coordination polymer is a crystalline materials possessing special regular nano-porous, high stability, adjustable size, high sensitivity and high selectivity. In this study, we demonstrated the design, shape-controlled synthesis of CuInSe-based nano- semiconductor of IB-IIIA-VIA group. The relationships between composition, structure and properties are studied. Porous coordination polymers with specific adsorption capability are prepared by selecting and synthesis ligands with different chain length. Then the CuInSe-based nano-semiconductor/porous coordination polymers composites are fabricated through self-assembly or surface adsorption. Also, the optoelectronic properties of the composite materials and electro-optical conversion efficiency are studied, and their inorganic/organic micro-process is explored. It is an important significance for improving the photoelectric conversion efficiency and increasing the absorption spectrum in the wavelength range of the CuInSe-based semiconductor nanomaterials.

纳米铜铟硒基半导体材料是重要的IB-IIIA-VIA族化合物，禁带宽度为1.55eV，且其禁带宽度对温度的变化不敏感，是直接带隙半导体材料，已作为太阳能电池的光吸收材料得到应用，然而提高太阳能电池材料的光电转化率，仍然是一项长期的研究任务。多孔配位聚合物具有规则孔道的多晶材料，稳定性高，尺寸可调，吸附具有高灵敏、高选择性。本研究通过设计、控制合成铜铟硒基IB-IIIA-VIA族半导体纳米材料，研究其组成、结构与性质的关系；通过选择和合成不同链长的配体，构筑具有特定吸附功能的多孔配位聚合物；通过自组装或表面吸附，制备纳米铜铟硒基半导体/多孔配位聚合物复合材料，研究复合材料的光电性质和光电转换效率，探讨其无机/有机微观过程。本研究对于提高铜铟硒基半导体纳米材料的光电转换效率和增大吸收光谱的波长范围具有重要意义。

项目研究重点开展了制备具有一定结构的铜铟硒基IB-IIIA-VIA族纳米半导体光电材料，如In2S3、CuInS2纳米材料，构筑具有不同孔道尺寸的{[Ag2(ADC)(bib)0.5]•H2O}n 、[Ag2(HADC)2(bimh)]、[Cd(ADC)(bpp)]n、{[Zn(ADC)(bib)]•CH3OH•H2O}n和 [Zn(ADA)(bib)]n等多孔配位聚合物，制备纳米铜铟硒基半导体/多孔配位聚合物复合材料，研究材料的光电性质和光电转换的效率，探讨其纳米材料结构与性质的关系。