氟化石墨烯光电探测器研究

The bandgap of graphene can be controlled by the use of fluorination. Base on this, fluorographene photodetector will be studied experimentally and theoretically in this proposal. Various types of fluorographene photodetectors are going to be prepared on rigid flat substrates, flexible substrates and suspended fluorographene (all-graphene photo detector). By analyzing the photoelectrical characteristics of these fluorographene photodetectors, we propose to explore the interface effect and quantum size effect in the optoelectronic transport process. We also propose to reveal the influence of defect and stress on the optoelectronic transport process. These studies are important to clarify the optoelectronic transport mechanism of the fluorographene photodetector.The results of this proposal are expected to become the theoretical basis of fluorographene used as a new optoelectronic material.

利用石墨烯氟化的方法对石墨烯带隙宽度进行调控，开展氟化石墨烯光电探测器的实验和理论研究，通过对刚性平面基底氟化石墨烯光电探测器、柔性基底氟化石墨烯光电探测器和全石墨烯光电探测器的光电响应特性研究，探索氟化石墨烯光电探测器光电输运过程中由基底引起的界面效应以及因器件尺寸减小引起的量子尺寸效应，并揭示缺陷和应力对氟化石墨烯光电探测器光电输运过程的影响规律，这对阐明氟化石墨烯光电探测器的光电输运机理具有重要意义，为使氟化石墨烯成为一种新型的光电材料提供理论依据。

石墨烯是一种带隙为零的半金属材料，石墨烯的能带结构可以通过表面氟化的方法而加以改变，使石墨烯从半金属到半导体转变，石墨烯氟化后带隙展宽并可实现对光子的探测，被认为是极具潜力的一种光电探测材料。由于多晶石墨烯中存在大量的晶界缺陷，晶界缺陷可能在氟化石墨烯带隙中引入陷阱中心或复合中心，影响探测器的性能。本项目首先开展了高质量大尺寸单晶石墨烯的制备研究，掌握了单晶石墨烯的成核和生长机理，获得了厘米级的高质量单晶石墨烯。在此基础上，开展了石墨烯氟化的模拟仿真和实验研究，对氟化石墨烯的晶体构型、能带结构及光谱调控进行了充分分析。制备了氟化石墨烯光电探测器，对探测器的光电性能进行了表征和评价，分析了光生载流子在氟化石墨烯中的产生、输运和复合的光电响应过程和机制。