基于微接触印刷的高性能三极型场发射器件制备及性能研究

Field emission display integrating nano cold cathode is the frontier and focus of current research of flat panel display, and is now at the storming stage of device fabrication. How to realize the precise location and in-situ growth of the nano cold cathode materials in the microstructure of field emission device becomes one of the key technical problems that desiderate to solve. In this project, we would take the doped ZnO one dimensional nanostructures based triode field emission array as the main research object, and micro- contact printing would be used for the precise location of ZnO nano particles on the desired position of the triode filed emission devices as the seed layer for the growth of doped ZnO one dimensional nanostructures. The mechanism and technological principle of micro- contact printing of ZnO nano particles on the devices, the low temperature and controllable growth technological principle and method of doped ZnO one dimensional nanostructures, the field emission properties of the doped ZnO one dimensional nanostructures, as well as the influence mechanism of the microstructure and the conductivity of the doped ZnO one dimensional nanostructures on the triode field emission properties would be investigated hierarchically, systematically and profoundly. This project aims to achieve nano cold cathode field emission array with low emission voltage, high emission current density, high uniformity and high stability, providing the base of theory and technologic support for the fabrication of excellent field emission display.

纳米冷阴极场发射显示器是当前平板显示技术的研究前沿和热点，并正处在器件研制的攻坚阶段。如何实现纳米冷阴极材料在场发射器件微结构中的精准定位和原位生长成为该研究亟需解决的关键技术难题之一。本项目拟以掺杂ZnO一维纳米结构的三极型场发射器件为主要研究对象，引入"微接触印刷技术"实现ZnO纳米颗粒在场发射阴极上的精准定位印刷以及掺杂ZnO一维纳米结构在器件中特定位置的原位、低温、垂直取向生长。对ZnO纳米颗粒在器件微结构中的微接触印刷机理和工艺，掺杂ZnO一维纳米结构的低温可控生长技术原理和途径，掺杂ZnO一维纳米结构的三极型场发射性能，以及掺杂ZnO一维纳米结构的微结构和导电性能对其三极型场发射性能的影响机制分层次进行系统深入地科学研究。本项目旨在获得低压发射，高发射电流密度且发射稳定的掺杂ZnO一维纳米结构场发射器件，为制作高性能场发射显示器奠定理论和技术基础。

项目以掺杂ZnO纳米结构的三极型场发射器件为主要研究对象，开展了高性能场发射材料的研究，同时引入“微接触印刷技术”实现掺杂ZnO一维纳米结构在器件中特定位置的原位取向生长。在场发射材料方面，成功制备了具有优异场发射性能的Sn和Al掺杂四针状ZnO纳米结构，并获得了掺杂量、生长温度、生长时间等参数对掺杂四针状ZnO纳米结构形貌、光学性能和场发射性能的影响规律，为高性能场发射器件的研究提供理论和材料基础。在器件方面，利用磁控溅射、光刻和湿法刻蚀技术，结合原位生长技术制备高性能新型平栅极场发射阴极阵列，利用图形化的发射材料作为场致发射电子源，获得高性能三极型场发射器件及其场发射机理。同时开展了部分集成成像3D显示的预研工作。在基金资助下共发表学术论文22篇，其中以第一作者和通讯作者发表SCI论文9篇，授权国家发明专利6件。