先进非易失性存储器辐照效应与加固技术基础研究

With the rapid development of Chinese aerospace industry, long life, high reliability, radiation hard, low power and miniaturization nanoscale novel space grade memories have become the main concerns for the academic and industrial communities. In particular CTM Flash and RRAM, as the attractive novel NVM candidates, point out the new trend of anti-radiation microelectronics. This project will focus on the material systems, integration process, device structures and circuit designs of CTM Flash and RRAM, especially aiming at the impacts of material/process/device on the anti-radiation performance of the novel NVMs. The origins and mechanisms of the radiation damage in the novel NVMs will be discovered by advanced physics techniques. The analytical models of radiation responses in the novel NVMs will be established. The radiation hard design methodology and algorithm of nonvolatile memory array and peripheral circuits are further studied in order to improve the survivability in space harsh environment. This project will propose radiation performance evaluation and qualification standards on the large capacity and complex functions novel NVMs. The rad-hard novel NVM demos will be payloads on the satellite platforms for validation of their effectiveness. The success of this research program will lay a solid foundation for the development of domestic radiation hard novel NVMs with large capacity and high reliability.

随着我国航天事业的飞速发展，长寿命、高可靠、抗辐照、低功耗和微型化为基本特点的新型宇航级存储器已成为学术界和工业界的关注重点，特别是以电荷俘获型闪存(CTM Flash)和阻变存储器(RRAM)为代表的新型非易失存储器（NVM）技术指明了抗辐照微电子学新的发展方向。本课题以CTM Flash和RRAM材料、工艺、器件和电路为研究对象，结合目前该领域的研究现状和项目组已有的研究基础，重点研究物理材料、器件和集成工艺对于新型NVM抗总剂量和单粒子辐照性能的影响，采用先进的物理分析手段表征辐照损伤根源和机理，并建立失效机制物理解析模型。进一步研究非易失存储阵列和外围电路单元的抗辐照设计方法和算法，提高空间辐射环境下的生存能力。提出针对大容量复杂功能新型NVM的辐照效应考核标准与规范，并基于卫星平台对原型电路进行搭载和有效性验证。本课题将为研制国产抗辐射新型大容量高可靠NVM奠定基础。

随着我国航天事业的飞速发展，长寿命、高可靠、抗辐照、低功耗和微型化为基本特点的新型宇航级存储器已成为学术界和工业界的关注重点，特别是以电荷俘获型闪存(CTM Flash)和阻变存储器(RRAM)为代表的新型非易失存储器（NVM）技术指明了抗辐照微电子学新的发展方向。本课题以CTM Flash和RRAM材料、工艺、器件和电路为研究对象，结合目前该领域的研究现状和项目组已有的研究基础，重点研究物理材料、器件和集成工艺对于新型NVM抗总剂量和单粒子辐照性能的影响，采用先进的物理分析手段表征辐照损伤根源和机理，并建立失效机制物理解析模型。进一步研究非易失存储阵列和外围电路单元的抗辐照设计方法和算法，提高空间辐射环境下的生存能力。提出针对大容量复杂功能新型NVM的辐照效应考核标准与规范，并基于卫星平台对原型电路进行搭载和有效性验证。本课题将为研制国产抗辐射新型大容量高可靠NVM奠定基础。.在执行项目期间，总共发表SCI收录文章49篇，国际会议文章22篇；培养博士生6人，硕士生11人；申请发明专利28项，其中17项获得授权；部分知识产权转移至北京中科新微特科技开发股份有限公司、四川省豆萁科技股份有限公司、合肥中科智存科技有限公司等国家高新技术企业，产生显著的经济效益和社会效益，获得中国科学院杰出科技成就奖1项，军队科技进步三等奖1项；主办国际学术会议 1次，主办国内会议3次。